scholarly journals Domain structures and correlated out-of-plane and in-plane polarization reorientations in Pb(Zr0.96Ti0.04)O3 single crystal via piezoresponse force microscopy

AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095211 ◽  
Author(s):  
N. V. Andreeva ◽  
N. A. Pertsev ◽  
D. A. Andronikova ◽  
A. V. Filimonov ◽  
N. G. Leontiev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Domain Structures ◽  
Out Of Plane

scholarly journals Contrast Mechanism Maps for Piezoresponse Force Microscopy

2002 ◽  
Vol 17 (5) ◽  
pp. 936-939 ◽  
Author(s):  
Sergei V. Kalinin ◽  
Dawn A. Bonnell
Keyword(s):  
Piezoresponse Force Microscopy ◽  
Radius Of Curvature ◽  
Experimental Conditions ◽  
Force Microscopy ◽  
Indentation Force ◽  
Domain Structures ◽  
Contrast Mechanism ◽  
Local Modification ◽  
Tip Radius ◽  
Imaging Conditions

Piezoresponse force microscopy (PFM) is one of the most established techniques for the observation and local modification of ferroelectric domain structures on the submicron level. Both electrostatic and electromechanical interactions contribute at the tip-surface junction in a complex manner, which has resulted in multiple controversies in the interpretation of PFM. Here we analyze the influence of experimental conditions such as tip radius of curvature, indentation force, and cantilever stiffness on PFM image contrast. These results are used to construct contrast mechanism maps, which correlate the imaging conditions with the dominant contrast mechanisms. Conditions under which materials properties can be determined quantitatively are elucidated.

scholarly journals Investigations of ferroelectric polycrystalline bulks and thick films using piezoresponse force microscopy

2019 ◽  
Vol 475 (2223) ◽  
pp. 20180782 ◽  
Author(s):  
Hana Uršič ◽  
Uroš Prah
Keyword(s):  
Domain Walls ◽  
Thick Films ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Domain Structures ◽  
Atomic Force ◽  
Ferroelectric Domain Structure ◽  
Converse Piezoelectric Effect ◽  
Non Destructive

In recent years, ferroelectric/piezoelectric polycrystalline bulks and thick films have been extensively studied for different applications, such as sensors, actuators, transducers and caloric devices. In the majority of these applications, the electric field is applied to the working element in order to induce an electromechanical response, which is a complex phenomenon with several origins. Among them is the field-induced movement of domain walls, which is nowadays extensively studied using piezoresponse force microscopy (PFM), a technique derived from atomic force microscopy. PFM is based on the detection of the local converse piezoelectric effect in the sample; it is one of the most frequently applied methods for the characterization of the ferroelectric domain structure due to the simplicity of the sample preparation, its non-destructive nature and its relatively high imaging resolution. In this review, we focus on the PFM analysis of ferroelectric bulk ceramics and thick films. The core of the paper is divided into four sections: (i) introduction; (ii) the preparation of the samples prior to the PFM investigation; (iii) this is followed by reviews of the domain structures in polycrystalline bulks; and (iv) thick films.

Study of domain boundary polarization in (111)-cut [Pb(Mg1∕3Nb2∕3)O3]0.7(PbTiO3)0.3 single crystal by piezoresponse force microscopy

2006 ◽  
Vol 89 (9) ◽  
pp. 092906 ◽  
Author(s):  
K. S. Wong ◽  
X. Zhao ◽  
J. Y. Dai ◽  
C. L. Choy ◽  
X. Y. Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Domain Boundary ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy

Domain structures in tetragonal Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals studied by piezoresponse force microscopy

2005 ◽  
Vol 133 (5) ◽  
pp. 311-314 ◽  
Author(s):  
H.F. Yu ◽  
H.R. Zeng ◽  
H.X. Wang ◽  
G.R. Li ◽  
H.S. Luo ◽  
...  
Keyword(s):  
Single Crystals ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Domain Structures

Dielectric and Electromechanical Behaviour of Relaxor [(1−x)Pb(Mg1/3Nb2/3)O3 -xPbTiO3] Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
N.J. Donnelly ◽  
G. Catalan ◽  
C. Morros ◽  
R.M. Bowman ◽  
J.M. Gregg
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Plane Strain ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Bulk Ceramic ◽  
Atomic Force ◽  
Out Of Plane ◽  
Order Of Magnitude

AbstractThin film capacitor structures of Au / (1−x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 /(La1/2Sr1/2)CoO3 were fabricated by pulsed laser deposition on single crystal {001} MgO substrates. Films were found to be perovskite dominated and highly {001} oriented. Dielectrically, films displayed relaxorlike features, though maximum permittivity was low compared to single crystal or bulk ceramic (∼1400 at peak @1kHz, for x=0.07, 0.1 & 0.2). A field induced piezoelectric coefficient d33 was measured by piezoresponse atomic force microscopy for specific compositions x =0, × =0.07, and x =0.1 and found to be disappointingly low - indicating poor electric field induced strain. Despite this macroscopic electrostrictive coefficients Q33 were found to be (3.6 ± 0.6) ×10−2C−2m4, (2.6 ± 0.2) ×10−2C−2m4, and (0.9 ± 0.3) ×10−2C−2m4 respectively. Crystallographic electrostrictive coefficients were determined by in-situ x-ray diffraction and found to be (4.9 ± 0.2) ×10−2C−2m4 for PMN-(0.07)PT and (1.9 ± 0.1) ×10−2C−2m4 for PMN-(0.1)PT. Considering that all these Q33 values are of the same order of magnitude as found in single crystal experiments (2.5 – 3.8 ×10−2C−2m4), it is suggested that low out-of-plane strain is entirely a result of reduced polarisability rather than reduced electrostrictive coefficients in thin films relative to bulk ceramic or single crystal. An estimate was also made of the Q13 electrostrictive coefficient for PMN and PMN-(0.07)PT by measuring permittivity as a function of applied in-plane strain. The values obtained were -1.31 ×10−2C−2m4 and -0.46 ×10−2C−2m4 respectively.

Piezoresponse force microscopy studies of nanoscale domain structures in ferroelectric thin film

2005 ◽  
Vol 120 (1-3) ◽  
pp. 104-108 ◽  
Author(s):  
H.R. Zeng ◽  
H.F. Yu ◽  
X.G. Tang ◽  
R.Q. Chu ◽  
G.R. Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Domain Structures
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