scholarly journals Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

APL Materials ◽  
2016 ◽  
Vol 4 (8) ◽  
pp. 080701 ◽  
Author(s):  
Minh D. Nguyen ◽  
Evert P. Houwman ◽  
Matthijn Dekkers ◽  
Chi T. Q. Nguyen ◽  
Hung N. Vu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Efficiency ◽  
Energy Storage ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Energy Storage Density ◽  
Storage Density

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Pulsed laser deposition of perovskite relaxor ferroelectric thin films

2006 ◽  
Vol 252 (13) ◽  
pp. 4553-4557 ◽  
Author(s):  
N. Scarisoreanu ◽  
M. Dinescu ◽  
F. Craciun ◽  
P. Verardi ◽  
A. Moldovan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Reactive pulsed laser deposition of piezoelectric and ferroelectric thin films

1999 ◽  
Vol 343-344 ◽  
pp. 90-93 ◽  
Author(s):  
F. Craciun ◽  
P. Verardi ◽  
M. Dinescu ◽  
G. Guidarelli
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Preparation and characterization of Bi4Ti3O12–SrBi4Ti4O15 ferroelectric thin films by pulsed laser deposition

2002 ◽  
Vol 237-239 ◽  
pp. 478-481 ◽  
Author(s):  
Minoru Noda ◽  
Toshiyuki Nakaiso ◽  
Kentaro Takarabe ◽  
Kazushi Kodama ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition
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