The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

2016 ◽  
Vol 120 (9) ◽  
pp. 095701 ◽  
Author(s):  
Poppy Siddiqua ◽  
Stephen K. O'Leary
Keyword(s):  
Gallium Nitride ◽  
Electron Transport ◽  
Conduction Band ◽  
Doping Concentration ◽  
Crystal Temperature ◽  
Zinc Blende

How changes in the crystal temperature and the doping concentration impact upon bulk wurtzite zinc oxide’s electron transport response

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2673-2678
Author(s):  
Poppy Siddiqua ◽  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Drift Velocity ◽  
Doping Concentration ◽  
Electron Drift ◽  
Crystal Temperature ◽  
Transient Transport ◽  
Transport Response ◽  
The Impact

ABSTRACTThe role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the doping concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the doping concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.

scholarly journals Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

2007 ◽  
Vol 18 (47) ◽  
pp. 475710 ◽  
Author(s):  
B W Jacobs ◽  
V M Ayres ◽  
R E Stallcup ◽  
A Hartman ◽  
M A Tupta ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Transport ◽  
Zinc Blende

A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide

2012 ◽  
Vol 112 (12) ◽  
pp. 123722 ◽  
Author(s):  
Walid A. Hadi ◽  
Shamsul Chowdhury ◽  
Michael S. Shur ◽  
Stephen K. O'Leary
Keyword(s):  
Gallium Arsenide ◽  
Zinc Oxide ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Detailed Characterization
Sign in / Sign up

Export Citation Format

Share Document