scholarly journals Resolving the energy and temperature dependence of C6H6∗ collisional relaxation via time-dependent bath temperature measurements

2016 ◽  
Vol 145 (1) ◽  
pp. 014308 ◽  
Author(s):  
Niclas A. West ◽  
Joshua D. Winner ◽  
Rodney D. W. Bowersox ◽  
Simon W. North
Keyword(s):  
Temperature Dependence ◽  
Bath Temperature ◽  
Temperature Measurements ◽  
Time Dependent ◽  
Collisional Relaxation

TEMPERATURE-DEPENDENCE OF PROTON CONDUCTIVITY IN HYDROGEN-BONDED MOLECULAR SYSTEMS

2007 ◽  
Vol 21 (19) ◽  
pp. 1239-1252 ◽  
Author(s):  
XIAO-FENG PANG ◽  
BO DENG ◽  
HUAI-WU ZHANG ◽  
YUAN-PING FENG
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Temperature Dependence ◽  
Electric Conductivity ◽  
Proton Conductivity ◽  
Model System ◽  
Time Dependent ◽  
Molecular Systems ◽  
Damping Effect ◽  
Hydrogen Bonded

The temperature-dependence of proton electric conductivity in hydrogen-bonded molecular systems with damping effect was studied. The time-dependent velocity of proton and its mobility are determined from the Hamiltonian of a model system. The calculated mobility of (3.57–3.76) × 10-6 m 2/ Vs for uniform ice is in agreement with the experimental value of (1 - 10) × 10-2 m 2/ Vs . When the temperature and damping effects of the medium are considered, the mobility is found to depend on the temperature for various electric field values in the system, i.e. the mobility increases initially and reaches a maximum at about 191 K, but decreases subsequently to a minimum at approximately 241 K, and increases again in the range of 150–270 K. This behavior agrees with experimental data of ice.

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

2019 ◽  
Vol 115 (5) ◽  
pp. 052103 ◽  
Author(s):  
F. Masin ◽  
M. Meneghini ◽  
E. Canato ◽  
C. De Santi ◽  
A. Stockman ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Time Dependent ◽  
Positive Temperature ◽  
Positive Temperature Dependence ◽  
Gan On Si

Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T

2011 ◽  
Vol 679-680 ◽  
pp. 816-819 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
A. Fontserè ◽  
Marcel Placidi ◽  
N. Baron ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Temperature Dependence ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Electron Gas ◽  
Temperature Measurements ◽  
Back Contact ◽  
Dimensional Electron ◽  
Dimensional Electron Gas

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.

Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Bias Stress

1990 ◽  
Vol 192 ◽  
Author(s):  
Tetsu Ogawa ◽  
Sadayoshi Hotta ◽  
Horoyoshi Takezawa
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
The Other ◽  
Time Dependent ◽  
Silicon Thin Film ◽  
Bias Stress

ABSTRACTThrough the time and temperature dependence measurements on threshold voltage shifts (Δ VT) in amorphous silicon thin film transistors, it has been found that two separate instability mechanisms exist; within short stress time ranges Δ Vτ increases as log t and this behavior corresponds to charge trapping in SiN. On the other hand, in long stress time ranges Δ VT increases as t t/4 and can be explained by time-dependent creation of trap in a-Si.

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