scholarly journals Unconventional magnetization of Fe3O4 thin film grown on amorphous SiO2 substrate

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065111 ◽  
Author(s):  
Jia-Xin Yin ◽  
Zhi-Guo Liu ◽  
Shang-Fei Wu ◽  
Wen-Hong Wang ◽  
Wan-Dong Kong ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Sio2 ◽  
Sio2 Substrate ◽  
Fe3o4 Thin Film

scholarly journals High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2145 ◽  
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Random Access ◽  
Oxide Thin Film ◽  
Amorphous Sio2 ◽  
Sio2 Substrate ◽  
Channel Layer

Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (μFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, μFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400 °C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2. The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2/SnO2 interfaces to increase the mobility. Such high μFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.

Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate

2007 ◽  
Vol 40 (18) ◽  
pp. 5666-5669 ◽  
Author(s):  
J Gao ◽  
J B Xu ◽  
M Zhu ◽  
N Ke ◽  
Dongge Ma
Keyword(s):  
Thin Film ◽  
Thickness Dependence ◽  
Amorphous Sio2 ◽  
Sio2 Substrate

Sub-100 femtosecond time scale spin dynamics in epitaxial Fe3O4 thin film

2021 ◽  
pp. 151456
Author(s):  
Xianyang Lu ◽  
Guanqi Li ◽  
Yuting Gong ◽  
Xuezhong Ruan ◽  
Yu Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Time Scale ◽  
Spin Dynamics ◽  
Fe3o4 Thin Film ◽  
Femtosecond Time Scale

Preparation of Fe3O4 thin film by the sol-gel method and its magnetic properties

1989 ◽  
Vol 8 (1) ◽  
pp. 83-85 ◽  
Author(s):  
Katsuhisa Tanaka ◽  
Toshinobu Yoko ◽  
Michio Atarashi ◽  
Kanichi Kamiya
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Fe3o4 Thin Film

scholarly journals Correction: Extremely low coercivity in Fe3O4 thin film grown on Mg2TiO4 (001)

RSC Advances ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 3142-3142
Author(s):  
X. H. Liu ◽  
W. Liu ◽  
Z. D. Zhang ◽  
A. C. Komarek ◽  
C. F. Chang
Keyword(s):  
Thin Film ◽  
Fe3o4 Thin Film

Correction for ‘Extremely low coercivity in Fe3O4 thin film grown on Mg2TiO4 (001)’ by X. H. Liu et al., RSC Adv., 2017, 7, 43648–43654.

Temperature Dependence of Thermal Conductivity of Amorphous and Crystal Thin Film by Molecular Dynamics Simulation

2007 ◽  
Author(s):  
Zhengxing Huang ◽  
Zhenan Tang ◽  
Suyuan Bai ◽  
Jun Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Temperature Dependence ◽  
Amorphous Materials ◽  
Dynamics Simulation ◽  
Amorphous Sio2 ◽  
Film Boundary ◽  
Different Temperatures

For crystal materials, thermal conductivity (TC) is proportional to T3 at low temperatures and to T−1 at high temperatures. TCs of most amorphous materials decrease with the decreasing temperatures. If a material is thin film, boundary will influence the TC and then influence the temperature dependence. In this paper, we calculate the TC of crystal and amorphous SiO2 thin films, which is a commonly used material in micro devices and Integrated Circuits, by NEMD simulations. The calculation temperatures are from 100K to 700K and the thicknesses are from 2nm to 8nm. TCs of crystal thin films reach their peak values at different temperatures for different thicknesses. The smaller thickness the larger peak values obtained. But for amorphous thin films, the results show that the temperature dependence of thin films is the same as bulk materials and not relative to their thicknesses. The obtained temperature dependence of the thin films is consistent with some previous measurements and the theory predictions.

Synthesis of ZnO thin film on FTO/SiO2 substrate by sol-gel seeding

2018 ◽  
Author(s):  
M. Marina ◽  
M. F. Fadzreen ◽  
M. A. F. Radzi ◽  
M. F. Z. Faisal ◽  
M. Z. M. Zamzuri ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Sio2 Substrate

Effect of growth temperature on ZnO thin film deposited on SiO2 substrate

2003 ◽  
Vol 98 (2) ◽  
pp. 135-139 ◽  
Author(s):  
Kwang-Sik Kim ◽  
Hyoun Woo Kim ◽  
Chong Mu Lee
Keyword(s):  
Thin Film ◽  
Growth Temperature ◽  
Zno Thin Film ◽  
Sio2 Substrate
Sign in / Sign up

Export Citation Format

Share Document