scholarly journals Ballistic conductivity of graphene channel with p-n junction at ferroelectric domain wall

2016 ◽  
Vol 108 (23) ◽  
pp. 232902 ◽  
Author(s):  
Anna N. Morozovska ◽  
Eugene A. Eliseev ◽  
Maksym V. Strikha
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain ◽  
Ballistic Conductivity

scholarly journals Ferroelectric domain wall phonon polarizer

2017 ◽  
Vol 1 (5) ◽  
Author(s):  
Miquel Royo ◽  
Carlos Escorihuela-Sayalero ◽  
Jorge Íñiguez ◽  
Riccardo Rurali
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain

Ferroelectric domain-wall logic units

2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
Domain Walls ◽  
Logic Gates ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Conduction Path ◽  
Conductive Atomic Force Microscopy ◽  
Flexible Control ◽  
Force Microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

Ferroelectric domain wall relaxation in Ba0.25Sr0.75TiO3 films displaying Curie-Weiss behavior

2004 ◽  
Vol 96 (8) ◽  
pp. 4392-4399 ◽  
Author(s):  
Yu. A. Boikov ◽  
K. Khamchane ◽  
T. Claeson
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain ◽  
Wall Relaxation

Depinning of the ferroelectric domain wall in congruent LiNbO3

2016 ◽  
Vol 109 (8) ◽  
pp. 082905 ◽  
Author(s):  
Venkatraman Gopalan ◽  
Simon R. Phillpot
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain
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