Improving retention time in tunnel field effect transistor based dynamic memory by back gate engineering

2016 ◽  
Vol 119 (21) ◽  
pp. 214501 ◽  
Author(s):  
Nupur Navlakha ◽  
Jyi-Tsong Lin ◽  
Abhinav Kranti
Keyword(s):  
Retention Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Back Gate ◽  
Dynamic Memory ◽  
Effect Transistor ◽  
Gate Engineering ◽  
Tunnel Field Effect Transistor

scholarly journals Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1415 ◽  
Author(s):  
Jaehong Lee ◽  
Garam Kim ◽  
Sangwan Kim
Keyword(s):  
Gate Voltage ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Subthreshold Swing ◽  
Gate Bias ◽  
Back Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design

In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD) simulation and were explained using the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate voltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition, it was found that the on–off current ratio of the TFET increased with a decrease in S due to the back-gate voltage.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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