scholarly journals On utilizing alternating current-flow field effect transistor for flexibly manipulating particles in microfluidics and nanofluidics

2016 ◽  
Vol 10 (3) ◽  
pp. 034105 ◽  
Author(s):  
Weiyu Liu ◽  
Jinyou Shao ◽  
Yukun Ren ◽  
Jiangwei Liu ◽  
Ye Tao ◽  
...  
Keyword(s):  
Flow Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Flow ◽  
Alternating Current ◽  
Effect Transistor

A novel micromixer based on the alternating current-flow field effect transistor

Lab on a Chip ◽  
2017 ◽  
Vol 17 (1) ◽  
pp. 186-197 ◽  
Author(s):  
Yupan Wu ◽  
Yukun Ren ◽  
Ye Tao ◽  
Likai Hou ◽  
Qingming Hu ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Flow Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Flow ◽  
Alternating Current ◽  
Low Energy ◽  
Low Energy Consumption ◽  
Effect Transistor ◽  
Induced Charge

Induced-charge electroosmosis (ICEO) phenomena have been attracting considerable attention as a means for pumping and mixing in microfluidic systems with the advantage of simple structures and low-energy consumption.

Flexible online in-droplet cell/synthetic particle concentration utilizing alternating current electrothermal-flow field effect transistor

Lab on a Chip ◽  
2021 ◽  
Author(s):  
Haizhen Sun ◽  
Yukun Ren ◽  
Ye Tao ◽  
Tianyi Jiang ◽  
Hongyuan Jiang
Keyword(s):  
Flow Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Particle Concentration ◽  
Alternating Current ◽  
Versatile Technique ◽  
Effect Transistor ◽  
Electrothermal Flow

Cell/particle concentration inside droplets holds the great potential in extending lab-in-a-droplet applications typically ranging from biological and chemical assays. Herein, we present an universal, massive and versatile technique, namely alternating...

Induced-charge electroosmotic trapping of particles

Lab on a Chip ◽  
2015 ◽  
Vol 15 (10) ◽  
pp. 2181-2191 ◽  
Author(s):  
Yukun Ren ◽  
Weiyu Liu ◽  
Yankai Jia ◽  
Ye Tao ◽  
Jinyou Shao ◽  
...  
Keyword(s):  
Flow Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Particle Trapping ◽  
Trapping Method ◽  
Effect Transistor ◽  
Induced Charge

We present a novel position-controllable particle trapping method by the adjustable ICEO technique known as AC-flow field effect transistor.

Numerical solution of electro-osmotic flow in a “flow field effect transistor”

2003 ◽  
Vol 48 (20-22) ◽  
pp. 3307-3312 ◽  
Author(s):  
Achim Van Theemsche ◽  
Johan Deconinck ◽  
Leslie Bortels
Keyword(s):  
Flow Field ◽  
Numerical Solution ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Osmotic Flow ◽  
Effect Transistor ◽  
Electro Osmotic Flow

ANALOG AND DIGITAL PERFORMANCE OF THE SCREEN-GRID FIELD EFFECT TRANSISTOR (SGRFET)

2008 ◽  
Vol 18 (04) ◽  
pp. 783-792
Author(s):  
K. FOBELETS ◽  
P.W. DING ◽  
Y. SHADROKH ◽  
J.E. VELAZQUEZ-PEREZ
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Current Flow ◽  
Soi Mosfet ◽  
Digital Performance ◽  
Type Device ◽  
Effect Transistor ◽  
Screen Grid

The Screen-Grid Field Effect Transistor (SGrFET) is a planar MOSFET-type device with a gating configuration consisting of metal cylindrical fingers inside the channel perpendicular to the current flow. The SGrFET operates in a MESFET mode using oxide insulated gates. The multi-gate configuration offers advantages for both analog and digital applications, whilst the gate cylinder holes can be exploited for bio-applications. In this manuscript TCAD results are presented on the analog and digital performance of the Screen-Grid Field Effect Transistor. The results are compared to the operation of an SOI-MOSFET and a finFET.

A programmable single-component diode based on an ambipolar organic field-effect transistor (OFET)

2012 ◽  
Vol 84 (4) ◽  
pp. 979-989 ◽  
Author(s):  
Tadashi Sugawara ◽  
Takuro Itoh ◽  
Kentaro Suzuki ◽  
Hiroyuki Higuchi ◽  
Michio M. Matsushita
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Alternating Current ◽  
Floating Gate ◽  
Molecular Device ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Oppositely Charged

An ambipolar field-effect transistor (FET) based on tetracyanoquarterthienoquinoid (TCT4Q) was constructed. When a set of source, drain, and gate voltages were applied to a thin film of TCT4Q at temperatures lower than 150 K, both positive and negative carriers were trapped and frozen even after removal of the gate voltage. The frozen carriers worked as a floating gate with the gradient by creating a PN(NP) junction through the injection of oppositely charged “mobile” carriers. The device exhibited a distinct rectifying effect when an alternating current (50 < f <500 mHz) was applied through the source and drain electrodes. Moreover, the function of the molecular device is programmable and erasable.

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