Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO2 thin films by sol-gel method

2016 ◽  
Author(s):  
A. K. M. Muaz ◽  
U. Hashim ◽  
M. K. Md. Arshad ◽  
A. R. Ruslinda ◽  
R. M. Ayub ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Electrical properties of TiO2 thin films prepared by the sol-gel method

1992 ◽  
Vol 112 (5) ◽  
pp. 10-16
Author(s):  
Noboru Yoshimura ◽  
Masashi Itoi ◽  
Shigeki Sato ◽  
Haruo Taguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Photoluminescence of Eu3+-Doped TiO2 Thin Films Prepared by Sol-Gel Method

2010 ◽  
Vol 150-151 ◽  
pp. 707-710
Author(s):  
Dan Hong Wang ◽  
Xiao Ru Zhao ◽  
Hui Nan Sun ◽  
Li Bing Duan ◽  
Chang Le Chen
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Annealing Temperature ◽  
Anatase Phase ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method

The sol-gel method was employed to prepare the Eu3+-doped TiO2 thin films. The influence of doping concentration and annealing temperature on the structures and photoluminescence (PL) properties was investigated. The result of X-ray diffraction revealed that all the films are of anatase phase. It is shown that the PL intensities of the films increased with Eu3+ concentration and reached the maximum at 1.4 mol%, then decreased with the concentration. Observed anatase phase appeared at temperature above 400 °C, and the luminescence intensity increased with the increase of annealing temperature.

OPTICAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS DIP-COATED OF SOL–GEL METHOD

2005 ◽  
Vol 12 (05n06) ◽  
pp. 697-701 ◽  
Author(s):  
M. RUSOP ◽  
K. UMA ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Film Deposition ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Higher Temperature

The transparent c-axis oriented ZnO thin films have been prepared by sol–gel method using zinc acetate as cations source, 2-mrthoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip coating technique at a withdrawal rate of 10 mm/min on quartz and silicon substrates. The effect of annealing temperature in air ambient from 100 to 800°C on the structural, optical and electrical properties of the films is discussed. ZnO films annealed with higher temperature showed an extremely sharp (002) peak in the XRD patterns, indicates increased crystallization. The optical transmittance spectra of the films is found to change with annealing temperature and showed a very good transmittance (between 80 to 90%) with the films prepared at 600°C showed highest optical transparency within the visible wavelength region. The absorption edge analysis revealed that the optical band gap is found to increase with annealing temperature up to 3.5 eV at 600°C and decreased with higher temperature. Electronic transition was found to be direct transition type. The minimum electrical resistivity of 55 Ω-cm was obtained for the films annealed at 600°C.

Sign in / Sign up

Export Citation Format

Share Document