scholarly journals Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

AIP Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 055201 ◽  
Author(s):  
Dongxue Wu ◽  
Ping Ma ◽  
Boting Liu ◽  
Shuo Zhang ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Flip Chip ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Interface Layer ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting

Analysis of the Light-Extraction Efficiency of Flip-Chip Deep-Ultraviolet Light-Emitting Diodes with Embedded Photonic Crystals

2021 ◽  
Vol 16 (4) ◽  
pp. 591-596
Author(s):  
Meng Liu ◽  
Xuan Zheng ◽  
Wenfei Liu ◽  
Juan Li ◽  
Wenjing Wang ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Ultraviolet Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

In the present study, embedded photonic crystals were introduced into the p-GaN contact layer of light-emitting diodes to increase the light-extraction efficiency of flip-chip deep-ultraviolet light-emitting diodes. As demonstrated by performing three-dimensional finite-difference time domain simulation, the embedded photonic crystals could be designed to increase the total reflectivity on the p-GaN contact layer, thereby increasing the light-extraction efficiency. In addition, the effects of the embedded photonic crystals configurations on the light-extraction efficiency of deep-ultraviolet light-emitting diodes were examined. Light-extraction efficiency over 21% for transverse magnetic polarized emission could be generally expected by rigorously optimizing the active layer position, as well as the depth, period, and filling factor of photonic crystals. Moreover, an investigation was conducted on the light-extraction efficiency over the whole ultraviolet spectrum, and more light-extraction efficiency harvest on a broadband ultraviolet spectrum has been achieved as compared with flip-chip planar deep-ultraviolet light-emitting diodes. The optimized structure will be promising for increasing the light-extraction efficiency of AlGaN-based flip-chip deep-ultraviolet light-emitting diodes.

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