scholarly journals Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

AIP Advances ◽  
2016 ◽  
Vol 6 (4) ◽  
pp. 045209 ◽  
Author(s):  
Kyuseung Lee ◽  
Sooryong Chae ◽  
Jongjin Jang ◽  
Daehong Min ◽  
Jaehwan Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Analysis ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Catalyst Free ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition ◽  
Free Metal

Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods

2012 ◽  
Vol 12 (2) ◽  
pp. 1645-1648
Author(s):  
Min Hwa Kim ◽  
Kunook Chung ◽  
Dae Young Moon ◽  
Jong-Myeong Jeon ◽  
Miyoung Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Catalyst Free ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Free Metal

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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