Size effects in near-ultraviolet Raman spectra of few-nanometer-thick silicon-on-insulator nanofilms

2016 ◽  
Vol 119 (15) ◽  
pp. 154302 ◽  
Author(s):  
Vladimir Poborchii ◽  
Yukinori Morita ◽  
Tetsuya Tada ◽  
Pavel I. Geshev ◽  
Zhandos N. Utegulov ◽  
...  
Author(s):  
Bin Li ◽  
Anastassios Mavrokefalos ◽  
Jianhua Zhou ◽  
Li Shi ◽  
Paul S. Ho ◽  
...  

A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect lines, which is used to investigate the size effects on the transport and electromigration properties of interconnects for future microelectronics.


2005 ◽  
Vol 37 (1) ◽  
pp. 33-38 ◽  
Author(s):  
Hyun Chul Choi ◽  
Young Mee Jung ◽  
Seung Bin Kim

2008 ◽  
Vol 19 (30) ◽  
pp. 305707 ◽  
Author(s):  
V M Dzhagan ◽  
M Ya Valakh ◽  
A E Raevskaya ◽  
A L Stroyuk ◽  
S Ya Kuchmiy ◽  
...  

1992 ◽  
Vol 72 (5) ◽  
pp. 1748-1751 ◽  
Author(s):  
Yoshikatsu Namba ◽  
Ebrahim Heidarpour ◽  
Masatoshi Nakayama
Keyword(s):  

2014 ◽  
Vol 105 (15) ◽  
pp. 153112 ◽  
Author(s):  
Vladimir Poborchii ◽  
Yukinori Morita ◽  
Manabu Ishimaru ◽  
Tetsuya Tada

2011 ◽  
Vol 109 (7) ◽  
pp. 074311 ◽  
Author(s):  
Giuseppe Faraci ◽  
Santo Gibilisco ◽  
Agata R. Pennisi ◽  
Carla Faraci

1995 ◽  
Vol 403 ◽  
Author(s):  
X. M. Lu ◽  
J. S. Zhu ◽  
P. Li ◽  
W. Jiang ◽  
X. Liu ◽  
...  

AbstractThe size effects were studied by the measurement of optical transmittance, Raman spectra and mechanical dissipation in BaTiO3 films. The variation of energy gap, Raman peaks, Curie temperature with film thickness and grain size was observed and the possible origin was analyzed.


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