scholarly journals Pulsed laser deposition of single layer, hexagonal boron nitride (white graphene, h-BN) on fiber-oriented Ag(111)/SrTiO3(001)

2016 ◽  
Vol 119 (9) ◽  
pp. 095306 ◽  
Author(s):  
Daniel Velázquez ◽  
Rachel Seibert ◽  
Hamdi Man ◽  
Linda Spentzouris ◽  
Jeff Terry
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Hexagonal Boron Nitride ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
White Graphene

Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

2014 ◽  
Vol 572 ◽  
pp. 245-250 ◽  
Author(s):  
Nicholas R. Glavin ◽  
Michael L. Jespersen ◽  
Michael H. Check ◽  
Jianjun Hu ◽  
Al M. Hilton ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Hexagonal Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area

Mechanical and Chemical Properties of CBxNy and CSixNy Thin Films Grown by N*-Plasma Assisted Pulsed Laser Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
T. Thärigen ◽  
V. Riede ◽  
G. Lippold ◽  
E. Hartmann ◽  
R. Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Properties ◽  
Plasma Source ◽  
Laser Deposition ◽  
Lower Amount ◽  
Rf Plasma ◽  
Clear Correlation

ABSTRACTCarbon silicon nitride (CSixNy), and carbon boron nitride (CBxNy) thin films have been grown by pulsed laser deposition (PLD) of various carbon (silicon/boron) (nitride) targets using an additional nitrogen RF plasma source on [100] oriented silicon substrates without additional heating. The CSixNy and CBxNy thin films were amorphous and showed nano hardness up to 23 GPa compared to 14 GPa for silicon and maximum nitrogen content of 30 at%. The maximum nanohardness was achieved for 10% Si and 10% B content in the films. The lower hardness of this films compared to the nanohardness of 30-50 GPa of DLC films indicates a lower amount of covalent carbon-nitrogen bonding in the films. However, in contrast to DLC films, the CSixNy and CBxNy films can be grown to thickness above 3 μm due to lower internal compressive stress. XPS of CSixNy and CBxNy film surfaces shows clear correlation of binding energy and intensity of N ls, C ls, and Si 2p peaks to composition of the PLD-targets and to nitrogen flow through plasma source, indicating soft changes of binding structure due to variation of PLD parameters. The results demonstrate the capability of the plasma assisted PLD process to deposit hard amorphous CSixNy, and CBxNy thin films with adjustable properties.

scholarly journals Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

2019 ◽  
Vol 1 (2) ◽  
pp. 643-655 ◽  
Author(s):  
Francesco Tumino ◽  
Carlo S. Casari ◽  
Matteo Passoni ◽  
Valeria Russo ◽  
Andrea Li Bassi
Keyword(s):  
Pulsed Laser Deposition ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Large Area ◽  
Molybdenum Disulphide ◽  
High Quality ◽  
Nanosized Crystals

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.

Ion‐assisted pulsed laser deposition of cubic boron nitride films

1994 ◽  
Vol 76 (5) ◽  
pp. 3088-3101 ◽  
Author(s):  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
D. L. Medlin ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Boron Nitride Films

Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm

2002 ◽  
Vol 81 (24) ◽  
pp. 4547-4549 ◽  
Author(s):  
Shojiro Komatsu ◽  
Keiji Kurashima ◽  
Hisao Kanda ◽  
Katsuyuki Okada ◽  
Mamoru Mitomo ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Ultraviolet Light ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Light Emitter

Electron Microscopy Study of Cubic Boron Nitride Thin Films Grown by Ion -Assisted Pulsed Laser Deposition

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Medlin ◽  
T.T. Friedmann ◽  
P.P. Mirkarimi ◽  
K.K. Mccarty ◽  
M.M. Mills
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Laser Deposition ◽  
Electron Microscopic ◽  
High Fraction

ABSTRACTWe present a microstructural study of boron nitride films grown by ion-assisted pulsed laser deposition. Fourier transform infra-red spectroscopy, electron energy loss spectroscopy, and electron diffraction measurements indicate that within the irradiated region of the substrate, the film consists of high fraction of cBN with a small amount of the turbostratic phase; outside of the irradiated region, only the turbostratic phase is detected. Conventional and high resolution electron microscopic observations of the boron nitride microstructure indicate that the cBN is in the form of twinned crystallites, up to 30 nm in diameter. We also observe particulates, formed by the laser pulse, that reduce the yield of cBN in the irradiated regions by shadowing local areas from the ion beam.

Microstructure of cubic boron nitride thin films grown by ion‐assisted pulsed laser deposition

1994 ◽  
Vol 76 (1) ◽  
pp. 295-303 ◽  
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
P. Rez ◽  
M. J. Mills ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition
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