Characterization of the crystal orientation in mono-oriented films of HDPE/LLDPE blends by IR dichroism

Impact of Crystalline Orientation on the Switching Field in Barium Titanate Using Piezoresponse Force Spectroscopy

MRS Proceedings ◽

10.1557/opl.2014.363 ◽

2014 ◽

Vol 1652 ◽

Author(s):

Nikhil K. Ponon ◽

Daniel J. R. Appleby ◽

Erhan Arac ◽

Kelvin S. K. Kwa ◽

Jonathan P. Goss ◽

...

Keyword(s):

Electric Field ◽

Phase Change ◽

Crystal Orientation ◽

Force Spectroscopy ◽

Ferroelectric Domain ◽

Switching Field ◽

The Impact ◽

Non Destructive ◽

Domain Level

ABSTRACTUnderstanding crystal orientation at the ferroelectric domain level, using a non destructive technique, is crucial for the design and characterization of nano-scale devices. In this study, piezoresponse force spectroscopy (PFS) is used to identify ferroelectric domain orientation. The impact of crystal orientation on the switching field of ferroelectric BaTiO3 is also investigated at the domain level. The preferential domain orientations for BaTiO3 thin films prepared by pulsed laser deposition (PLD) in this study are [001], [101] and [111]. They have been mapped onto PFS spectra to show three corresponding switching fields of 460, 330 and 120 kV/cm respectively. In addition, the electric field at which the enhanced piezoresponse occurs was found to vary, due to a phase change. The polarization reversal occurs via a 2-step process (rotation and switching) for [101] and [111] orientations. The piezoresponse enhancement is absent for the [001] (pure switching) domains. The results demonstrate that an electric field induced phase change causes the [101] and [111] domains to reverse polarization at a lower field than the [001] domain.

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Influence of crystal orientation and Berkovich tip rotation on the mechanical characterization of grain boundaries in molybdenum

Materials & Design ◽

10.1016/j.matdes.2019.107998 ◽

2019 ◽

Vol 182 ◽

pp. 107998 ◽

Cited By ~ 5

Author(s):

S. Jakob ◽

A. Leitner ◽

A. Lorich ◽

M. Eidenberger-Schober ◽

W. Knabl ◽

...

Keyword(s):

Grain Boundaries ◽

Crystal Orientation ◽

Mechanical Characterization ◽

Tip Rotation

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New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga-C-N Novel Systems

MRS Proceedings ◽

10.1557/proc-449-313 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 3

Author(s):

J. Kouvetakis ◽

M. O’Keeffe ◽

Louis Brouseau ◽

J. McMurran ◽

Darrick Williams ◽

...

Keyword(s):

Carbon Nitride ◽

Columnar Growth ◽

Cross Sectional ◽

X Ray ◽

Transmission Electron ◽

Single Source Precursor ◽

Cvd Synthesis ◽

Oriented Films ◽

Cubic Structure

ABSTRACTWe describe the development of a new deposition method for thin oriented films of GaN on basal plane sapphire using an exclusively inorganic single-source precursor free of carbon and hydrogen, Cl2GaN3. The films have been characterized by Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (TEM) for composition morphology and structure. RBS analysis confirmed stoichiometric GaN and TEM observations of the highly conformal films revealed heteroepitaxial columnar growth of crystalline wurrtzite material on sapphire. Auger and RBS oxygen and carbon resonance profiles indicated that the films were pure and highly homogeneous. We also report the reactions of Cl2GaN3 with organometallic nitriles to yield a crystalline, novel gallium carbon nitride of composition GaC3N3. Quantitative X-ray powder diffraction has been used to refine the cubic structure of this material which consists of Ga atoms octahedrally surrounded by on the average three C and three N atoms. The structurally analogous LiGaC4N4 phase has also been prepared and characterized.

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Characterization of Cu2O Thin Film Grown by Molecular Beam Epitaxy

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.582.157 ◽

2013 ◽

Vol 582 ◽

pp. 157-160 ◽

Cited By ~ 2

Author(s):

Takumi Oshima ◽

Masaya Nohara ◽

Takuya Hoshina ◽

Hiroaki Takeda ◽

Takaaki Tsurumi

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Deposition Rate ◽

Crystal Orientation ◽

Molecular Beam ◽

Good Crystallinity ◽

Relationship Of

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

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Characterization of crystallographic properties of GaN thin film using automated crystal orientation mapping with TEM

Metals and Materials International ◽

10.1007/s12540-012-6011-6 ◽

2012 ◽

Vol 18 (6) ◽

pp. 997-1001 ◽

Cited By ~ 1

Author(s):

Seung Jo Yoo ◽

Jin-Gyu Kim ◽

Chang-Yeon Kim ◽

Eun-Mee Kim ◽

Ji-Hyun Lee ◽

...

Keyword(s):

Thin Film ◽

Crystal Orientation ◽

Orientation Mapping ◽

Crystal Orientation Mapping

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Growth and characterization of (Bi, Pb)2Sr2Ca2Cu3Oxsingle crystals

Journal of Materials Research ◽

10.1557/jmr.1998.0075 ◽

1998 ◽

Vol 13 (3) ◽

pp. 589-595 ◽

Cited By ~ 24

Author(s):

Shaoyan Chu ◽

Michael E. McHenry

Keyword(s):

Detection Limit ◽

Chemical Composition ◽

Crystal Orientation ◽

Impurity Phase ◽

Squid Magnetometry ◽

X Ray Diffraction ◽

Phase Purity ◽

Relative Fraction ◽

X Ray

(Bi, Pb)2Sr2Ca2Cu3Ox (2223) single crystals have been grown using a fused-salt reaction of Bi2O3, PbO, SrCl2, CaCl2, CuCl, and KNO3 in a KCl flux. The pristine crystals show regular plate-like morphology with typical dimension of 0.1 × 0.1 × 0.001–0.01 mm3. Crystal orientation, chemical composition, phase purity, and superconductivity of the pristine crystals were determined by SEM, TEM, EDX, x-ray diffraction techniques, and SQUID magnetometry. The relative fraction of the Bi-2223 phase (Tc = 110 K) in as-grown crystals is ~97%. The only impurity phase, Bi-2212, occurs in some selected crystals but is present in amounts less than the detection limit of x-ray diffraction and is unobserved in the diamagnetic signal determined by SQUID magnetometry.

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X-Ray Texture Analysis of Oriented PZT Thin Films

MRS Proceedings ◽

10.1557/proc-433-297 ◽

1996 ◽

Vol 433 ◽

Cited By ~ 2

Author(s):

C. R. Peterson ◽

N. W. Medendorp ◽

E. B. Slamovich ◽

K. J. Bowman

Keyword(s):

Thin Films ◽

Pole Figure ◽

Reasonable Agreement ◽

Quantitative Characterization ◽

Pzt Thin Films ◽

X Ray ◽

Oriented Film ◽

Oriented Films ◽

Organic Decomposition

AbstractPZT thin films with the composition Pb(Zr0.6Ti0 4)O3 were processed via metallo-organic decomposition (MOD) with {111} and {100} orientations. Ferroelectric measurements showed that the {111} and {100} oriented films had remanent polarizations of 19.5 μC/cm2 and 16 μC/cm2, respectively. Both x-ray pole figure analysis and the Harris texture index were used to quantify the degree of {100}, {110}, and {111} orientation in each film, with reasonable agreement between the two methods. The {100} oriented thin film was determined to be 582 times random for the Harris technique versus 522 times random for pole figure analysis, while the {111} oriented film was 41 times random for the Harris technique and 81 times random for pole figure analysis. The axisymmetric texture of the films allow 2-D pole figure analysis to provide a quantitative characterization of film texture.

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