scholarly journals The optical band gap investigation of PVP-capped ZnO nanoparticles synthesized by sol-gel method

Author(s):  
Yayah Yuliah ◽  
Ayi Bahtiar ◽  
Fitrilawati ◽  
Rustam E. Siregar
2009 ◽  
Vol 95 (3) ◽  
pp. 031901 ◽  
Author(s):  
Kamakhya Prakash Misra ◽  
R. K. Shukla ◽  
Atul Srivastava ◽  
Anchal Srivastava

2016 ◽  
pp. 173-180 ◽  
Author(s):  
Ehsan Jafarnejad ◽  
Salah Khanahmadzadeh ◽  
Fatemeh Ghanbary ◽  
Morteza Enhessari

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 132 ◽  
Author(s):  
Theopolina Amakali ◽  
Likius. S. Daniel ◽  
Veikko Uahengo ◽  
Nelson Y. Dzade ◽  
Nora H. de Leeuw

Zinc oxide (ZnO) is a versatile and inexpensive semiconductor with a wide direct band gap that has applicability in several scientific and technological fields. In this work, we report the synthesis of ZnO thin films via two simple and low-cost synthesis routes, i.e., the molecular precursor method (MPM) and the sol–gel method, which were deposited successfully on microscope glass substrates. The films were characterized for their structural and optical properties. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for piezoelectric applications. The surface roughness derived from atomic force microscopy (AFM) analysis indicates that films prepared via MPM were relatively rough with an average roughness (Ra) of 2.73 nm compared to those prepared via the sol–gel method (Ra = 1.55 nm). Thin films prepared via MPM were more transparent than those prepared via the sol–gel method. The optical band gap of ZnO thin films obtained via the sol–gel method was 3.25 eV, which falls within the range found by other authors. However, there was a broadening of the optical band gap (3.75 eV) in thin films derived from MPM.


2014 ◽  
Vol 895 ◽  
pp. 63-68 ◽  
Author(s):  
Mohd Syafiq Zulfakar ◽  
Huda Abdullah ◽  
Wan Nasarudin Wan Jalal ◽  
Sahbudin Shaari ◽  
Zainuddin Zalita

The effect of morphological structures and optical band gap of (1-x)ZnAl2O4xSiO2samples with compositions ofx= 0.00, 0.05, 0.10 and 0.15 were prepared by sol-gel method. Spin coating technique was used to deposited the (1-x)ZnAl2O4xSiO2as a thin film and to investigate the structural and optical band gap. The produced thin film samples were annealed at 450 °C for 1h. Field emission scanning electron microscope (FESEM) was used to investigate the surface morphology of the samples. The average particle size for (1-x)ZnAl2O4xSiO2is about 331.23 nm. The particle size are tend to increase as the composition of SiO2increased. XRD analysis shows the formation of cubic structure phase and dominant peak has been observed with Miller Indices (311) plane. The average crystallite size,Dwas calculated with average size about 8 13 nm. The optical band gap was calculated for (1-x)ZnAl2O4xSiO2samples and it was found within range of 3.34 to 3.94 eV.


2013 ◽  
Vol 124 (1) ◽  
pp. 125-127 ◽  
Author(s):  
Z.A. Alahmed ◽  
Z. Serbetçi ◽  
F. Yakuphanoglu

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