Free-standing gallium nitride membrane-based sensor for the impedimetric detection of alcohols

2016 ◽  
Vol 119 (7) ◽  
pp. 074502 ◽  
Author(s):  
Y. Alifragis ◽  
G. Roussos ◽  
A. K. Pantazis ◽  
G. Konstantinidis ◽  
N. Chaniotakis
Keyword(s):  
Gallium Nitride ◽  
Free Standing

Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment

2009 ◽  
Vol 24 (12) ◽  
pp. 125008 ◽  
Author(s):  
Donagh O'Mahony ◽  
Walter Zimmerman ◽  
Sinje Steffen ◽  
Just Hilgarth ◽  
Pleun Maaskant ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Schottky Diode ◽  
Free Standing ◽  
Temperature Environment ◽  
High Temperature Environment

scholarly journals Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Micromachines ◽  
2016 ◽  
Vol 7 (9) ◽  
pp. 121 ◽  
Author(s):  
Yucheng Lan ◽  
Jianye Li ◽  
Winnie Wong-Ng ◽  
Rola Derbeshi ◽  
Jiang Li ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Free Standing ◽  
Gallium Nitride Nanoparticles

Frequency conversion in free-standing periodically oriented gallium nitride

2016 ◽  
Author(s):  
Christopher G. Brown ◽  
Steven R. Bowman ◽  
Jennifer K. Hite ◽  
Jaime A. Freitas ◽  
Francis J. Kub ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Frequency Conversion ◽  
Free Standing

scholarly journals The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 712
Author(s):  
Wen-Chieh Ho ◽  
Yao-Hsing Liu ◽  
Wen-Hsuan Wu ◽  
Sung-Wen Huang Chen ◽  
Jerry Tzou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electric Field ◽  
Structural Optimization ◽  
Breakdown Voltage ◽  
Device Performance ◽  
Free Standing ◽  
High Crystalline Quality ◽  
Mesa Structure ◽  
High Breakdown Voltage ◽  
Structure Improvement

In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm2 and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60° bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance.

Microfabrication in free-standing gallium nitride using UV laser micromachining

2006 ◽  
Vol 252 (13) ◽  
pp. 4897-4901 ◽  
Author(s):  
E. Gu ◽  
H. Howard ◽  
A. Conneely ◽  
G.M. O’Connor ◽  
E.K. Illy ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Laser Micromachining ◽  
Uv Laser ◽  
Free Standing

71Ga NMR characterization of an n-doped free-standing gallium nitride wafer

2019 ◽  
Vol 58 (3) ◽  
pp. 031003
Author(s):  
Atsushi Goto ◽  
Yoshihiro Irokawa ◽  
Toshihide Nabatame ◽  
Masataka Tansho ◽  
Kenjiro Hashi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Free Standing ◽  
Nmr Characterization
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