Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

2016 ◽  
Vol 108 (5) ◽  
pp. 051605 ◽  
Author(s):  
P. Dharmaraj ◽  
P. Justin Jesuraj ◽  
K. Jeganathan
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Graphene ◽  
Hydrogen Intercalation

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation

Nano Letters ◽  
2011 ◽  
Vol 11 (9) ◽  
pp. 3875-3880 ◽  
Author(s):  
Joshua A. Robinson ◽  
Matthew Hollander ◽  
Michael LaBella ◽  
Kathleen A. Trumbull ◽  
Randall Cavalero ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Hydrogen Intercalation

scholarly journals Publisher's Note: “Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001)” [Appl. Phys. Lett. 105, 161602 (2014)]

2015 ◽  
Vol 107 (18) ◽  
pp. 189902 ◽  
Author(s):  
Jonathan D. Emery ◽  
Virginia D. Wheeler ◽  
James E. Johns ◽  
Martin E. McBriarty ◽  
Blanka Detlefs ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Hydrogen Intercalation

scholarly journals Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

2009 ◽  
Vol 103 (24) ◽  
Author(s):  
C. Riedl ◽  
C. Coletti ◽  
T. Iwasaki ◽  
A. A. Zakharov ◽  
U. Starke
Keyword(s):  
Epitaxial Graphene ◽  
Free Standing ◽  
Hydrogen Intercalation

Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide

2012 ◽  
Vol 100 (18) ◽  
pp. 183112 ◽  
Author(s):  
Shriram Shivaraman ◽  
Lihong H. Herman ◽  
Farhan Rana ◽  
Jiwoong Park ◽  
Michael G. Spencer
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Epitaxial Graphene ◽  
Barrier Inhomogeneities

scholarly journals Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

Nanoscale ◽  
2017 ◽  
Vol 9 (10) ◽  
pp. 3440-3448 ◽  
Author(s):  
C. Melios ◽  
M. Winters ◽  
W. Strupiński ◽  
V. Panchal ◽  
C. E. Giusca ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Hydrogen Intercalation

Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling

Nanoscale ◽  
2014 ◽  
Vol 6 (18) ◽  
pp. 10562-10568 ◽  
Author(s):  
Fan-Hung Liu ◽  
Shun-Tsung Lo ◽  
Chiashain Chuang ◽  
Tak-Pong Woo ◽  
Hsin-Yen Lee ◽  
...  
Keyword(s):  
Energy Relaxation ◽  
Epitaxial Graphene ◽  
Graphene Sheets ◽  
Hot Carriers ◽  
Substrate Coupling ◽  
Hydrogen Intercalation

Reduced energy relaxation with hydrogen intercalation.

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