Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells

2016 ◽  
Vol 108 (3) ◽  
pp. 031108 ◽  
Author(s):  
Y. Zhang ◽  
R. M. Smith ◽  
Y. Hou ◽  
B. Xu ◽  
Y. Gong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stokes Shift ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells

1999 ◽  
Vol 86 (12) ◽  
pp. 6803-6809 ◽  
Author(s):  
A. Aït-Ouali ◽  
J. L. Brebner ◽  
R. Y.-F. Yip ◽  
R. A. Masut
Keyword(s):  
Quantum Wells ◽  
Stokes Shift ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
Yong-Hoon Cho ◽  
T. J. Schmidt ◽  
S. Bidnyk ◽  
J.J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Doping Concentration ◽  
Stokes Shift ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Recombination Lifetime ◽  
Si Doping

AbstractWe have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1 -μm-thick Al0.07Ga0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 × 1017 to 3 × 1019 cm3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from ∼ 30 ns (for n < 1 × 1017 cm-3) to ∼4 ns (for n = 3 x 1019 cm-3). To elucidate whether non-radiative recombination processes affect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.

scholarly journals Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 715-720
Author(s):  
Yong-Hoon Cho ◽  
T. J. Schmidt ◽  
S. Bidnyk ◽  
J. J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Doping Concentration ◽  
Stokes Shift ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Recombination Lifetime ◽  
Si Doping

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1-μm-thick Al0.07Ga0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 × 1017 to 3 × 1019 cm−3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from ∼ 30 ns (for n < 1 × 1017 cm−3) to ∼ 4 ns (for n = 3 × 1019 cm−3). To elucidate whether non-radiative recombination processes affect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization

Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells

1992 ◽  
Vol 31 (Part 2, No. 3B) ◽  
pp. L313-L315 ◽  
Author(s):  
Stephen Giugni ◽  
Kenji Kawashima ◽  
Kenzo Fujiwara ◽  
Naokatsu Sano
Keyword(s):  
Quantum Wells ◽  
Optical Bistability ◽  
Dual Wavelength ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
Sign in / Sign up

Export Citation Format

Share Document