Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

2016 ◽  
Vol 119 (2) ◽  
pp. 025707 ◽  
Author(s):  
Satoshi Kurai ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Yoichi Yamada
Keyword(s):  
Epitaxial Layers ◽  
Potential Fluctuations ◽  
Si Doped

Electrical and Optical Properties of Vanadium in Omvpe-Grown GaAs

1989 ◽  
Vol 145 ◽  
Author(s):  
W. S. Hobson ◽  
S. J. Pearton ◽  
V. Swaminathan ◽  
A. S. Jordan ◽  
Y. J. Kao ◽  
...  
Keyword(s):  
Deep Level ◽  
Vanadium Content ◽  
Epitaxial Layers ◽  
Electrical And Optical Properties ◽  
Vanadium Concentration ◽  
Co Doping ◽  
Undoped Material ◽  
Maximum Value ◽  
Si Doped ◽  
Transient Spectroscopy

AbstractThe electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2 H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec – 0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8 × 1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was > 4 × 1016 cm−3. The net carrier concentration profiles resulting from 29 si implantation into GaAs containing 1018 cm−3of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3intracenter emission at 0.65∼0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3only 2.5 × 1013 cm−3was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.

Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique

1991 ◽  
Vol 69 (3-4) ◽  
pp. 407-411 ◽  
Author(s):  
T. Bretagnon ◽  
A. Jean ◽  
P. Silvestre ◽  
S. Bourassa ◽  
R. Le Van Mao ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Emission Rate ◽  
Deep Level ◽  
Vapor Transport ◽  
Epitaxial Layers ◽  
Spectroscopy Technique ◽  
Electron Traps ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Transport Technique

The deep-level transient spectroscopy technique was applied to the study of deep electron traps existing in n-type GaAs epitaxial layers that were prepared by the close-spaced vapor transport technique using three kinds of sources (semi-insulator-undoped, Zn-doped and Si-doped GaAs). Two midgap electron traps labelled ELCS1 and EL2 were observed in all layers regardless of the kind of source used. In addition, the effect of the electric field on the emission rate of ELCS1 is discussed and its identification to ETX2 and EL12 is suggested.

Potential Fluctuations and Site Switching in Si-doped GaAs Studied by Photoluminescence

2002 ◽  
Vol T101 (1) ◽  
pp. 114 ◽  
Author(s):  
H. G. Svavarsson ◽  
J. T. Gudmundsson ◽  
G. I. Gudjonsson ◽  
H. P. Gislason
Keyword(s):  
Potential Fluctuations ◽  
Si Doped

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge

1998 ◽  
Vol 193 (4) ◽  
pp. 501-509 ◽  
Author(s):  
Prasanta Modak ◽  
Mantu Kumar Hudait ◽  
Shyam Hardikar ◽  
S.B Krupanidhi
Keyword(s):  
Epitaxial Layers ◽  
Si Doped

Luminescence Properties of Si-Doped GaN and Evidence of Compensating Defects As the Origin of the Yellow Luminescence

1997 ◽  
Vol 482 ◽  
Author(s):  
I. D. Goepfert ◽  
E. F. Schubert ◽  
J. M. Redwing
Keyword(s):  
Optical Properties ◽  
Doping Concentration ◽  
Random Distribution ◽  
Optical Transition ◽  
Near Band Edge ◽  
Yellow Luminescence ◽  
Potential Fluctuations ◽  
Si Doped ◽  
Theoretical Results ◽  
Experimental Ratio

AbstractWe investigate the optical properties of n-type Gallium Nitride (GaN) with concentrations ranging from 5×1016 to 7×1018 cm−3. The near-band edge ultraviolet (UV) transition increases monotonically with the doping concentration. The photoluminescence linewidth of the near-bandgap optical transition increases from 47 to 78 meV as the doping concentration is increased. The broadening is modeled by taking into account potential fluctuations caused by the random distribution of donor impurities. Excellent agreement is found between experimental and theoretical results. We also investigate the origin of the yellow luminescence in GaN. At low excitation densities the experimental ratio of the UV-to-yellow photoluminescence does not change significantly as the doping concentration is increased by two orders of magnitude. Analysis of the luminescence in terms of a theoretical model indicates that the yellow luminescence is due to compensating impurities or defects.

Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration

2012 ◽  
Vol 112 (3) ◽  
pp. 033512 ◽  
Author(s):  
Satoshi Kurai ◽  
Kazuhide Shimomura ◽  
Hideaki Murotani ◽  
Yoichi Yamada ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Plane Strain ◽  
Epitaxial Layers ◽  
Optical Polarization ◽  
Al Content ◽  
Si Doped

Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy

1977 ◽  
Vol 38 (1) ◽  
pp. 85-92 ◽  
Author(s):  
Tsuyoshi Kotani ◽  
Osamu Ueda ◽  
Kenzo Akita ◽  
Yorimitsu Nishitani ◽  
Toshihiro Kusunoki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Direct Observation ◽  
Epitaxial Layers ◽  
Transmission Electron ◽  
Si Doped

X-ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AIGaAs Layers on GaAs(001)

1990 ◽  
Vol 34 ◽  
pp. 507-517 ◽  
Author(s):  
L. C. Bassignana ◽  
D.A. Macquistan ◽  
D.A. Clark
Keyword(s):  
Cell Structure ◽  
Crystal Defects ◽  
Dislocation Network ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Reflection And Transmission ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Si Doped

AbstractAsymmetric crystal topography (ACT) in reflection and transmission electron microscopy (TEM) were used to investigate the crystal quality of both typical GaAs substrates and AIGaAs epitaxial layers grown on these substrates. ACT topographs of large sections of 75mm GaAs wafers revealed the presence of several types of crystal defects. All the GaAs wafers surveyed showed the presence of low angle grain boundaries which usually extended over a significant portion of the wafer. In addition, the well-known cell structure dislocation network was always observed in semi-insulating wafers. Less common but often present were inclusions and precipitates. The n-type (Si doped) substrates showed a typical cross-hatched pattern. ACT topography also easily revealed the crystal damage caused by wafer grinding.Epitaxial layers of AIGaAs were grown by conventional molecular beam epitaxy on these characterized GaAs substrates. ACT topography was used to examine separately the epitaxial layers and substrate crystals. Layers which were grown below the pseudomorphic limit showed crystal features identical to the GaAs substrate on which they were grown and the substrate was unaffected by the presence of the epitaxial layer. AJAs layers which were grown above the pseudomorphic limit were severely dislocated: TEM confirmed the presence of misfit dislocations at the interface. The substrate in this case also showed the presence of crosshatching indicating the the extension of the dislocation strain field into the substrate.

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