Effects of interface and bulk properties of gate-dielectric on the performance and stability of hydrogenated amorphous silicon thin-film transistors

2015 ◽  
Vol 118 (23) ◽  
pp. 234505 ◽  
Author(s):  
M. Ando ◽  
M. Wakagi ◽  
K. Onisawa
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Bulk Properties ◽  
Hydrogenated Amorphous

Performance of thin hydrogenated amorphous silicon thin‐film transistors

1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

1995 ◽  
Vol 30 (9) ◽  
pp. 2254-2256 ◽  
Author(s):  
Bor -Yir Chen ◽  
Wei -Hsiung Wu ◽  
Jiann -Ruey Chen ◽  
Chum -Sam Hong
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document