Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

2015 ◽  
Vol 107 (23) ◽  
pp. 232905 ◽  
Author(s):  
X. Guo ◽  
D. Pei ◽  
H. Zheng ◽  
S. W. King ◽  
Y.-H. Lin ◽  
...  
1990 ◽  
Vol 181 ◽  
Author(s):  
P. L. Meissner ◽  
J. C. Bravman ◽  
T. Kendelewicz ◽  
K. Miyano ◽  
W. E. Spicer ◽  
...  

ABSTRACTThe formation of Pd-Ge layers was studied as a function of deposition and annealing using synchrotron Ultraviolet Photoemission Spectroscopy (UPS). Pd depositions ranging in thickness from 0.5 monolayers (ML) to 44 ML were examined in-situ on Ge (111) cleaved in ultra-high vacuum. The primary reaction components appear to be Pd2Ge and PdGe. Comparison of bulk and surface sensitive Ge 3d core levels for even the highest coverages indicates that Ge segregates to the surface at room temperature. Such low temperature segregation suggests that Ge can diffuse via a rapid diffusion mechanism.


RSC Advances ◽  
2016 ◽  
Vol 6 (113) ◽  
pp. 112403-112408 ◽  
Author(s):  
Menglong Zhu ◽  
Lu Lyu ◽  
Dongmei Niu ◽  
Hong Zhang ◽  
Shitan Wang ◽  
...  

The effect of a MoO3 buffer layer inserted between 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) and Co single-crystal film has been investigated using X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS).


Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 429-433 ◽  
Author(s):  
N Moslemzadeh ◽  
S.D Barrett ◽  
V.R Dhanak ◽  
G Miller

2010 ◽  
Vol 1270 ◽  
Author(s):  
Selina Olthof ◽  
Hans Kleemann ◽  
Björn Lüssem ◽  
Karl Leo

AbstractIn this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.


2000 ◽  
Vol 253 (1) ◽  
pp. 125-131 ◽  
Author(s):  
Takafumi Kimura ◽  
Michinori Sumimoto ◽  
Shigeyoshi Sakaki ◽  
Hitoshi Fujimoto ◽  
Yukinobu Hashimoto ◽  
...  

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