Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors

Kenji Natori; Hiroshi Iwai; Kuniyuki Kakushima

doi:10.1063/1.4937548

Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4937548 ◽

2015 ◽

Vol 118 (23) ◽

pp. 234502 ◽

Cited By ~ 6

Author(s):

Kenji Natori ◽

Hiroshi Iwai ◽

Kuniyuki Kakushima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Low Field ◽

Field Mobility ◽

Low Field Mobility

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Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1779967 ◽

2004 ◽

Vol 85 (6) ◽

pp. 1057-1059 ◽

Cited By ~ 29

Author(s):

E. Simoen ◽

A. Mercha ◽

C. Claeys ◽

E. Young

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Noise Parameters ◽

Low Field ◽

Field Mobility ◽

Low Field Mobility

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Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.4722 ◽

1995 ◽

Vol 34 (Part 1, No. 9A) ◽

pp. 4722-4727 ◽

Cited By ~ 6

Author(s):

Yasuhisa Omura

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ultrathin Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Substrate Current ◽

Current Characteristics

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3448 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3448-3459 ◽

Cited By ~ 5

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Channel Current ◽

Current Voltage ◽

Lightly Doped Drain

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

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Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c054 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C054

Author(s):

Kenta Ishimura ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Direct observation of channel hot-electron energy in short-channel metal-oxide-semiconductor field-effect transistors

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667466 ◽

2010 ◽

Author(s):

Gang Zhang ◽

Cheng Yang ◽

Hua-Min Li ◽

Tian-zi Shen ◽

Won Jong Yoo

Keyword(s):

Metal Oxide ◽

Electron Energy ◽

Direct Observation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Short Channel

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Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1474422 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1030-1033 ◽

Cited By ~ 1

Author(s):

P. W. Li ◽

W. M. Liao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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