scholarly journals Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

2015 ◽  
Vol 107 (24) ◽  
pp. 242401 ◽  
Author(s):  
Toshiki Kanaki ◽  
Hirokatsu Asahara ◽  
Shinobu Ohya ◽  
Masaaki Tanaka
Keyword(s):  
Metal Oxide ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Transistor Structure ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport

A new approach to gate/n− overlapped lightly doped drain structures: added gate after implantation of n− (AGAIN)

1991 ◽  
Vol 69 (3-4) ◽  
pp. 174-176 ◽  
Author(s):  
Ian W. Wylie ◽  
N. Garry Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Junction Depth ◽  
Transistor Structure ◽  
New Approach ◽  
Effect Transistor ◽  
Lightly Doped Drain

A new lightly doped drain (LDD) metal oxide semiconductor field effect transistor structure is presented that provides substantial overlap of the gate over the n− region independent of the n− junction depth. This structure uses polysilicon spacers to replace the oxide sidewall spacers used in a conventional LDD device. The structure has been given the acronym "AGAIN," for added gate after implantation of n−.

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

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