Role of the buffer at the interface of intrinsic a-Si:H and p-type a-Si:H on amorphous/crystalline silicon heterojunction solar cells

2015 ◽  
Vol 107 (22) ◽  
pp. 223901 ◽  
Author(s):  
Fanying Meng ◽  
Leilei Shen ◽  
Jianhua Shi ◽  
Liping Zhang ◽  
Jinning Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Type A ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

scholarly journals Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (43) ◽  
pp. 26776-26782 ◽  
Author(s):  
Fengyou Wang ◽  
Yanbo Gao ◽  
Zhenyu Pang ◽  
Lili Yang ◽  
Jinghai Yang
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Back Surface ◽  
Back Surface Field ◽  
Heterojunction Solar Cells ◽  
Interface Defects ◽  
Surface Field ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Interface defects and the back surface field of p-type heterojunction solar cells are investigated for achieving high performance.

Low-resistivity p-type a-Si:H/AZO hole contact in high-efficiency silicon heterojunction solar cells

2021 ◽  
Vol 542 ◽  
pp. 148749
Author(s):  
Zhuopeng Wu ◽  
Weiyuan Duan ◽  
Andreas Lambertz ◽  
Depeng Qiu ◽  
Manuel Pomaska ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Type A ◽  
Heterojunction Solar Cells ◽  
Low Resistivity ◽  
P Type ◽  
Silicon Heterojunction Solar Cells
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