Metallization and Hall-effect of Mg2Ge under high pressure

2015 ◽  
Vol 107 (14) ◽  
pp. 142103 ◽  
Author(s):  
Yuqiang Li ◽  
Yang Gao ◽  
Yonghao Han ◽  
Cailong Liu ◽  
Gang Peng ◽  
...  
Keyword(s):  
High Pressure ◽  
Hall Effect

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Strong Disorder ◽  
Region Temperature ◽  
Localization Region

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

In situ Hall effect measurement on diamond anvil cell under high pressure

2010 ◽  
Vol 81 (11) ◽  
pp. 115101 ◽  
Author(s):  
Tingjing Hu ◽  
Xiaoyan Cui ◽  
Yang Gao ◽  
Yonghao Han ◽  
Cailong Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
Hall Effect ◽  
Diamond Anvil Cell ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Diamond Anvil

Hall effect measurement in the diamond anvil high‐pressure cell

1986 ◽  
Vol 57 (11) ◽  
pp. 2795-2797 ◽  
Author(s):  
Dinesh Patel ◽  
Todd E. Crumbaker ◽  
James R. Sites ◽  
Ian L. Spain
Keyword(s):  
High Pressure ◽  
Hall Effect ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
High Pressure Cell ◽  
Pressure Cell ◽  
Diamond Anvil

Hall Effect and Resistivity in Epitaxial MnSi Thin Films Under Ambient and High Pressure

2019 ◽  
Vol 55 (2) ◽  
pp. 1-4
Author(s):  
D. Menzel ◽  
D. Schroeter ◽  
N. Steinki ◽  
S. Sullow ◽  
Alexander Fernandez Scarioni ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Hall Effect

scholarly journals Hall effect in CeAl2under high pressure

2009 ◽  
Vol 150 (4) ◽  
pp. 042127
Author(s):  
Hidenori Miyagawa ◽  
Masashi Ohashi ◽  
Tomohito Nakano ◽  
Gendo Oomi ◽  
Isamu Satoh ◽  
...  
Keyword(s):  
High Pressure ◽  
Hall Effect

In Situ Electrical Resistivity and Hall Effect Measurement of β-HgS under High Pressure

2015 ◽  
Vol 32 (1) ◽  
pp. 016402 ◽  
Author(s):  
Ting-Jing Hu ◽  
Xiao-Yan Cui ◽  
Xue-Fei Li ◽  
Jing-Shu Wang ◽  
Jing-Hai Yang ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Hall Effect ◽  
Hall Effect Measurement ◽  
Effect Measurement

Hall Effect in CeIn3under High Pressure

2015 ◽  
Vol 84 (12) ◽  
pp. 123702 ◽  
Author(s):  
Shingo Araki ◽  
Taiki Onji ◽  
Shunsaku Kitagawa ◽  
Tatsuo C. Kobayashi ◽  
Takashi Kambe
Keyword(s):  
High Pressure ◽  
Hall Effect
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