Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3and HfO2on AlGaN/GaN heterostructure capacitors

2015 ◽  
Vol 118 (12) ◽  
pp. 124106 ◽  
Author(s):  
A. Winzer ◽  
N. Szabó ◽  
J. Ocker ◽  
R. Hentschel ◽  
M. Schuster ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Detailed Analysis ◽  
Gan Heterostructure ◽  
Oxide Barriers

Detailed Analysis of the Microstructure of the Metal/Oxide Interface Region in Zircaloy-2 after Autoclave Corrosion Testing

2011 ◽  
pp. 595-619 ◽  
Author(s):  
Pia Tejland ◽  
Mattias Thuvander ◽  
Hans-Olof Andrén ◽  
Sorina Ciurea ◽  
Thomas Andersson ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Detailed Analysis ◽  
Corrosion Testing ◽  
Interface Region ◽  
Oxide Interface

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

2001 ◽  
Vol 01 (04) ◽  
pp. L221-L226 ◽  
Author(s):  
S. L. RUMYANTSEV ◽  
N. PALA ◽  
M. S. SHUR ◽  
M. E. LEVINSHTEIN ◽  
P. A. IVANOV ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Concentration ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Noise Sources ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

The dependence of the 1/f noise on 2D electron concentration in the channel n Ch of AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors has been studied and compared. The dependencies of Hooge parameter αCh for the noise sources located in the channel of the transistors on sheet electron concentration are found identical for both types of devices. The increase of the Hooge parameter αCh with the decrease of the channel concentration observed in both types of devices confirms that the noise sources are located in the region under the gate in the AlGaN/GaN heterostructure and that electron tunneling from the 2D electron gas into the traps in GaN or AlGaN layers is a probable noise mechanism.

scholarly journals Photoelectrochemical water splitting: a road from stable metal oxides to protected thin film solar cells

2020 ◽  
Vol 8 (21) ◽  
pp. 10625-10669 ◽  
Author(s):  
Carles Ros ◽  
Teresa Andreu ◽  
Joan R. Morante
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Detailed Analysis ◽  
Water Splitting ◽  
Thin Film Solar Cells ◽  
Third Generation ◽  
Liquid Junction ◽  
Oxide Electrodes

The present review offers a detailed analysis of Photoelectrochemical (PEC) devices from metal oxide electrodes forming a semiconductor–liquid junction to protected and catalyst-decorated third generation solar cells adapted into photoelectrodes.

Atomistic calculation of leakage current through ultra-thin metal-oxide barriers

2003 ◽  
Vol 69 (2-4) ◽  
pp. 130-137 ◽  
Author(s):  
Leonardo R.C. Fonseca ◽  
Anatoli Korkin ◽  
Alexander A. Demkov ◽  
Xiaodong Zhang ◽  
Andrey Knizhnik
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Thin Metal ◽  
Atomistic Calculation ◽  
Oxide Barriers

Detailed Analysis of the Microstructure of the Metal/Oxide Interface Region in Zircaloy-2 after Autoclave Corrosion Testing

2011 ◽  
pp. 595-619 ◽  
Author(s):  
Pia Tejland ◽  
Mattias Thuvander ◽  
Hans-Olof Andrén ◽  
Sorina Ciurea ◽  
Thomas Andersson ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Detailed Analysis ◽  
Corrosion Testing ◽  
Interface Region ◽  
Oxide Interface

Detailed Analysis of the Microstructure of the Metal/Oxide Interface Region in Zircaloy-2 after Autoclave Corrosion Testing

2011 ◽  
Vol 8 (6) ◽  
pp. 102956 ◽  
Author(s):  
Pia Tejland ◽  
Mattias Thuvander ◽  
Hans-Olof Andrén ◽  
Sorina Ciurea ◽  
Thomas Andersson ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Detailed Analysis ◽  
Corrosion Testing ◽  
Interface Region ◽  
Oxide Interface
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