Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

2015 ◽  
Vol 118 (10) ◽  
pp. 105704 ◽  
Author(s):  
Takeshi Inaoka ◽  
Takuro Furukawa ◽  
Ryo Toma ◽  
Susumu Yanagisawa
Keyword(s):  
Band Gap ◽  
Tensile Strain ◽  
Band Gap Energy ◽  
Strain Effect ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Direct Band

scholarly journals Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

1997 ◽  
Vol 81 (10) ◽  
pp. 6916-6920 ◽  
Author(s):  
P. Roura ◽  
M. López-de Miguel ◽  
A. Cornet ◽  
J. R. Morante
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Photoluminescence Excitation ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Direct Band

Optical Properties of CuZn0.8Cd0.2SnS4 Quinternary Alloy Nanostructures

2015 ◽  
Author(s):  
A. S. Ibraheam ◽  
Y. Al-Douri ◽  
U. Hashim ◽  
Waleed K. Ahmed
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Spin Coating ◽  
Band Gap Energy ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Coating Technique ◽  
Cu Content ◽  
Direct Band ◽  
Alloy Nanostructures

Cu2Zn0.8Cd0.2SnS4 quinternary alloy nanostructures were prepared with different copper (Cu) concentrations; 0.3, 0.5, 0.7 and 0.9 mol/L using the spin coating technique. The direct band gap energy of Cu2Zn0.8Cd0.2SnS4 quinternary alloy nanostructures is investigated to decrease as Cu increases. The transmittance value in the range 63–49% is depending on Cu content.

Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be‐doped GaAsSb lattice matched to InP

1994 ◽  
Vol 65 (19) ◽  
pp. 2442-2444 ◽  
Author(s):  
K. G. Merkel ◽  
V. M. Bright ◽  
M. A. Marciniak ◽  
C. L. A. Cerny ◽  
M. O. Manasreh
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Transition Energies ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Donor Acceptor ◽  
Direct Band ◽  
Lattice Matched

Hydrostatic-pressure coefficient of the direct band-gap energy ofAlxGa1−xAsforx=0−0.35

1996 ◽  
Vol 53 (16) ◽  
pp. 10916-10920 ◽  
Author(s):  
Hyeonsik M. Cheong ◽  
J. H. Burnett ◽  
W. Paul ◽  
P. F. Hopkins ◽  
K. Campman ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Band Gap ◽  
Pressure Coefficient ◽  
Band Gap Energy ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Direct Band

Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83876-83879 ◽  
Author(s):  
Chengyong Xu ◽  
Paul A. Brown ◽  
Kevin L. Shuford
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Plane Strain ◽  
Material Properties ◽  
First Principles ◽  
Tensile Strain ◽  
First Principles Calculations ◽  
Direct Band Gap ◽  
Direct Band ◽  
Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

First principles study of silicene symmetrically and asymmetrically functionalized with halogen atoms

RSC Advances ◽  
2016 ◽  
Vol 6 (98) ◽  
pp. 95846-95854 ◽  
Author(s):  
Wencheng Tang ◽  
Minglei Sun ◽  
Qingqiang Ren ◽  
Yajun Zhang ◽  
Sake Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Tensile Strain ◽  
First Principles Calculations ◽  
Direct Band Gap ◽  
Halogen Atoms ◽  
First Principles Study ◽  
Direct Band

Using first principles calculations, we predicted that a direct-band-gap between 0.98 and 2.13 eV can be obtained in silicene by symmetrically and asymmetrically (Janus) functionalisation with halogen atoms and applying elastic tensile strain.

Control of direct band gap emission of bulk germanium by mechanical tensile strain

2010 ◽  
Vol 96 (4) ◽  
pp. 041909 ◽  
Author(s):  
M. El Kurdi ◽  
H. Bertin ◽  
E. Martincic ◽  
M. de Kersauson ◽  
G. Fishman ◽  
...  
Keyword(s):  
Band Gap ◽  
Tensile Strain ◽  
Direct Band Gap ◽  
Direct Band ◽  
Mechanical Tensile
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