Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

2015 ◽  
Vol 107 (7) ◽  
pp. 073507 ◽  
Author(s):  
Juan Dong ◽  
Jiangjian Shi ◽  
Dongmei Li ◽  
Yanhong Luo ◽  
Qingbo Meng
Keyword(s):  
Solar Cell ◽  
Conduction Band ◽  
Zno Nanorods ◽  
Perovskite Solar Cell ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Highly Efficient

Limiting effects of conduction band offset and defect states on high efficiency CZTSSe solar cell

Nano Energy ◽  
2018 ◽  
Vol 45 ◽  
pp. 75-83 ◽  
Author(s):  
SeongYeon Kim ◽  
Tanka R. Rana ◽  
JunHo Kim ◽  
Dae-Ho Son ◽  
Kee-Jeong Yang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conduction Band ◽  
High Efficiency ◽  
Band Offset ◽  
Defect States ◽  
Conduction Band Offset

Conduction-Band-Offset Rule Governing J-V Distortion in CdS/CI(G)S Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
A. Kanevce ◽  
M. Gloeckler ◽  
A.O. Pudov ◽  
J.R. Sites
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conduction Band ◽  
Defect Density ◽  
Forward Bias ◽  
Window Layer ◽  
Band Offset ◽  
Type I ◽  
Current Collection ◽  
Conduction Band Offset

AbstractA type-I (“spike”) conduction-band offset (CBO) greater than a few tenths of an eV at the n/p interface of a solar cell can lead to significant distortion of the current-voltage (J-V) curve. Such distortion has been observed in CdS/CIS cells, low-gallium CdS/CIGS cells, and CIGS cells with alternative windows that increase the CBO. The basic feature is reduced current collection in forward bias. The distortion is mitigated by photoconductivity in the CdS or other window layer, and it is therefore more severe if the illumination contains no photons with energies greater than the band gap of the window layer. The device-physics analysis of such distortion is numerical simulation incorporating a three-layer [TCO/CdS/CI(G)S] approximation for the solar cell. The parameters that influence the barrier height, and hence the distortion, are the magnitude of the CBO, the doping of the p- and n- layers, the defect density of the CdS, and the thicknesses of the CdS and TCO layers. The key value, however, is the energy difference between the quasi-Fermi level for electrons and the conduction band at the CdS/CIS interface. Thermionic emission across the interface will limit the current collection, if the difference exceeds approximately 0.48 eV at 300 K and one-sun illumination. This constraint is consistent with experiment, and strategies to satisfy the 0.48-eV rule when designing solar cells are enumerated.

Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction

2011 ◽  
Vol 99 (22) ◽  
pp. 222105 ◽  
Author(s):  
M. Bär ◽  
B.-A. Schubert ◽  
B. Marsen ◽  
R. G. Wilks ◽  
S. Pookpanratana ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Conduction Band ◽  
Thin Film Solar Cell ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Cu2znsns4 Thin Film

Vertical 2D/3D Heterojunction of Tin Perovskites for Highly Efficient HTM-Free Perovskite Solar Cell

2021 ◽  
Author(s):  
Jin-Tai Lin ◽  
Tzu-Chi Chu ◽  
Deng-Gao Chen ◽  
Zhi-Xuan Huang ◽  
Hsiao-Chien Chen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Perovskite Solar Cell ◽  
Highly Efficient

A highly-efficient concentrated perovskite solar cell-thermoelectric generator tandem system

2020 ◽  
Author(s):  
Yangying Zhou ◽  
Yanan Chen ◽  
Qi Zhang ◽  
Yu Zhou ◽  
Meiqian Tai ◽  
...  
Keyword(s):  
Solar Cell ◽  
Thermoelectric Generator ◽  
Perovskite Solar Cell ◽  
Highly Efficient

scholarly journals Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035312
Author(s):  
Hyojung Kim ◽  
Soonkon Kim ◽  
Jongmin Yoo ◽  
Changyong Oh ◽  
Bosung Kim ◽  
...  
Keyword(s):  
Conduction Band ◽  
Threshold Voltage ◽  
Band Offset ◽  
Positive Bias ◽  
Conduction Band Offset
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