scholarly journals Observation of suppressed Auger mechanism in type-I quantum well structures with delocalized electron-hole wavefunctions

AIP Advances ◽  
2015 ◽  
Vol 5 (8) ◽  
pp. 087138 ◽  
Author(s):  
Iman Hassani Nia ◽  
Vala Fathipour ◽  
Hooman Mohseni
Keyword(s):  
Quantum Well ◽  
Type I ◽  
Electron Hole ◽  
Quantum Well Structures ◽  
Delocalized Electron

Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

1998 ◽  
Vol 108 (4) ◽  
pp. 205-209 ◽  
Author(s):  
J Haetty ◽  
E.H Lee ◽  
H Luo ◽  
A Petrou ◽  
J Warnock
Keyword(s):  
Quantum Well ◽  
Type I ◽  
Type Ii ◽  
Interband Transitions ◽  
Quantum Well Structures

Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Spatial Separation ◽  
Wave Functions ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Lower Temperature

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

scholarly journals Evidence of correlated electron hole pairs in dots in asymmetric quantum well structures

2010 ◽  
Vol 245 ◽  
pp. 012050 ◽  
Author(s):  
M H Abdellatif ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Nam Ki Cho ◽  
Jung Il Lee
Keyword(s):  
Quantum Well ◽  
Electron Hole ◽  
Quantum Well Structures ◽  
Correlated Electron ◽  
Asymmetric Quantum

Conduction edge strain splitting in Ge-Si quantum wells using EELS

1993 ◽  
Vol 51 ◽  
pp. 816-817
Author(s):  
P.E. Batson ◽  
J.F. Morar
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Lattice Mismatch ◽  
Axial Strain ◽  
Band Edge ◽  
Reference Level ◽  
Conduction Band Edge ◽  
Type I ◽  
Quantum Well Structures

Ge/Si quantum well structures show a high hole mobility as the heavy hole bands are shifted to lower energy under bi-axial strain produced by lattice mismatch between the well and the Si substrate. This strain can also split and shift the conduction band edge in the well to below that of Si, producing a Type I quantum well capable of photo-luminescence. In previous work, we have shown that the conduction bandstructure can be obtained using EELS in the relaxed Ge/Si alloy system. Also, we have noticed that the heterojunction band offset can be obtained from EELS because the Si 2p core level is a constant energy reference level throughout the alloy composition. In this report, we show that a detailed fitting of the shape of the Si L2,3 edge can obtain the bi-axial strain splitting of the conduction band edge as a function of position inside a quantum well. This information can then be correlated with annular dark field images of the cross sectioned well.

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