Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors

2015 ◽  
Vol 118 (4) ◽  
pp. 045701 ◽  
Author(s):  
Nianduan Lu ◽  
Ling Li ◽  
Writam Banerjee ◽  
Pengxiao Sun ◽  
Nan Gao ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Organic Semiconductors ◽  
Marcus Theory ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range

Mott variable range hopping transport in thermal evaporated vanadyl 2, 3 naphthalocyanine thin films

2021 ◽  
pp. 125029
Author(s):  
I. Dhanya ◽  
Malathy Krishnan ◽  
Reny Renji ◽  
M.K. Anu ◽  
Rachel G. Varghese ◽  
...  
Keyword(s):  
Thin Films ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 283-286 ◽  
Author(s):  
Antonella Parisini ◽  
Andrea Parisini ◽  
Marco Gorni ◽  
Roberta Nipoti
Keyword(s):  
Electrical Transport ◽  
Room Temperature ◽  
Hole Transport ◽  
Variable Range Hopping ◽  
Electrical Transport Properties ◽  
Hopping Transport ◽  
Variable Range ◽  
Transmission Electron ◽  
Temperature Variable ◽  
Post Implantation

In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5×1020 cm-3 Al+ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×1020 cm-3 samples

HOPPING TRANSPORT ALONG A POTENTIAL WALL: OSCILLATIONS OF THE MAGNETORESISTANCE IN A PARALLEL FIELD

1993 ◽  
Vol 07 (18) ◽  
pp. 3313-3326
Author(s):  
M.E. RAIKH ◽  
T.V. SHAHBAZYAN
Keyword(s):  
Magnetic Field ◽  
Pronounced Effect ◽  
Variable Range Hopping ◽  
General Increase ◽  
Hopping Transport ◽  
Variable Range ◽  
Parallel Field ◽  
Shrinkage Effect ◽  
2D System ◽  
Localized Electrons

We study the variable-range-hopping magnetoresistance of a 2D system of localized electrons in the presence of a boundary parallel to the plane of the 2D electrons. In a magnetic field B parallel to the plane, the magnetoresistance oscillates with B if the distance between the plane and the boundary is not too large. These oscillations result from the interference of the amplitude of the in-plane tunneling path with the amplitude of the path reflected by the boundary. We show that the orbital shrinkage effect, altering differently both amplitudes, strongly enhances the interference. At the same time, the amplitude of oscillations appears to be small compared to the general increase in the resistance caused by the orbital shrinkage. The most pronounced effect of the interference can be seen in the differential magnetoresistance R−1(B)∂R(B)/∂B, which we analyze numerically.

Variable Range Hopping Transport under the Coulomb Correlation in the PrBa2Cu3O7-x

1994 ◽  
pp. 1075-1078
Author(s):  
Uki Kabasawa ◽  
Yoshinobu Tarutani ◽  
Mahi Singh ◽  
Tokuumi Fukazawa ◽  
Akira Tsukamoto ◽  
...  
Keyword(s):  
Variable Range Hopping ◽  
Coulomb Correlation ◽  
Hopping Transport ◽  
Variable Range

Synthesis, Characterization, and Variable Range Hopping Transport of Pyrite (FeS2) Nanorods, Nanobelts, and Nanoplates

ACS Nano ◽  
2013 ◽  
Vol 7 (2) ◽  
pp. 1731-1739 ◽  
Author(s):  
Miguel Cabán-Acevedo ◽  
Dong Liang ◽  
Kit S. Chew ◽  
John P. DeGrave ◽  
Nicholas S. Kaiser ◽  
...  
Keyword(s):  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range
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