scholarly journals Electric field modulation of Schottky barrier height in graphene/MoSe2van der Waals heterointerface

2015 ◽  
Vol 107 (2) ◽  
pp. 023109 ◽  
Author(s):  
Yohta Sata ◽  
Rai Moriya ◽  
Sei Morikawa ◽  
Naoto Yabuki ◽  
Satoru Masubuchi ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Field Modulation

scholarly journals The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1794
Author(s):  
Xuefei Liu ◽  
Zhaocai Zhang ◽  
Bing Lv ◽  
Zhao Ding ◽  
Zijiang Luo
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
External Electric Field ◽  
Barrier Height ◽  
Density Functional ◽  
Schottky Barrier Height ◽  
Schottky Contact ◽  
Valence Band Maximum ◽  
Charge Analysis ◽  
P Type

Graphene-based van der Waals (vdW) heterojunction plays an important role in next-generation optoelectronics, nanoelectronics, and spintronics devices. The tunability of the Schottky barrier height (SBH) is beneficial for improving device performance, especially for the contact resistance. Herein, we investigated the electronic structure and interfacial characteristics of the graphene/AlN interface based on density functional theory. The results show that the intrinsic electronic properties of graphene changed slightly after contact. In contrast, the valence band maximum of AlN changed significantly due to the hybridization of Cp and Np orbital electrons. The Bader charge analysis showed that the electrons would transfer from AlN to graphene, implying that graphene would induce acceptor states. Additionally, the Schottky contact nature can be effectively tuned by the external electric field, and it will be tuned from the p-type into n-type once the electric field is larger than about 0.5 V/Å. Furthermore, the optical absorption of graphene/AlN is enhanced after contact. Our findings imply that the SBH is controllable, which is highly desirable in nano-electronic devices.

Electric field-tunable electronic structures of 2D alkaline-earth metal hydroxide–graphene heterostructures

2017 ◽  
Vol 5 (29) ◽  
pp. 7230-7235 ◽  
Author(s):  
Congxin Xia ◽  
Qiang Gao ◽  
Wenqi Xiong ◽  
Juan Du ◽  
Xu Zhao ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Electric Fields ◽  
Electronic Structures ◽  
Alkaline Earth ◽  
Schottky Barrier Height ◽  
Earth Metal ◽  
Metal Hydroxide ◽  
Alkaline Earth Metal

In X(OH)2/graphene (X = Ca, Mg) vdW heterostructures, the Schottky barrier height and contact types are effectively tuned by electric fields.

Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field

2020 ◽  
Vol 22 (41) ◽  
pp. 23699-23706
Author(s):  
Rui Zhang ◽  
Guoqiang Hao ◽  
Xiaojun Ye ◽  
Shangpeng Gao ◽  
Hongbo Li
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Plane Strain ◽  
Barrier Height ◽  
Electrical Transport ◽  
Schottky Barrier Height ◽  
Nanoelectronic Devices ◽  
Transport Behavior ◽  
Out Of Plane

Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

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