scholarly journals Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

2015 ◽  
Vol 107 (2) ◽  
pp. 022105 ◽  
Author(s):  
Heine Nygard Riise ◽  
Thomas Schumann ◽  
Alexander Azarov ◽  
Renè Hübner ◽  
Wolfgang Skorupa ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Flash Lamp ◽  
Excess Silicon

scholarly journals The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Series Resistance ◽  
Crystalline Silicon ◽  
Thermionic Emission ◽  
Analytical Description ◽  
Theoretical Explanation ◽  
The Impact

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.

Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells

2010 ◽  
Vol 10 (2) ◽  
pp. S222-S225 ◽  
Author(s):  
Sung-Bin Cho ◽  
Kyoung-Kook Hong ◽  
Joo-Youl Huh ◽  
Hyun Jung Park ◽  
Ji-Weon Jeong
Keyword(s):  
Solar Cells ◽  
Thick Film ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Contact Formation ◽  
Ambient Oxygen

The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

2005 ◽  
pp. 497-502
Author(s):  
Daniel Macdonald ◽  
Prakash N.K. Deenapanray ◽  
Andres Cuevas ◽  
S. Diez ◽  
Stephan W. Glunz
Keyword(s):  
Crystalline Silicon ◽  
Oxygen Defects

Role of Tribochemistry in Nanowear of Single-Crystalline Silicon

2012 ◽  
Vol 4 (3) ◽  
pp. 1585-1593 ◽  
Author(s):  
Jiaxin Yu ◽  
Seong H. Kim ◽  
Bingjun Yu ◽  
Linmao Qian ◽  
Zhongrong Zhou
Keyword(s):  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline
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