scholarly journals Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

2015 ◽  
Vol 118 (1) ◽  
pp. 015701 ◽  
Author(s):  
S. K. Yadav ◽  
V. Sharma ◽  
R. Ramprasad
Keyword(s):  
Electronic Structure ◽  
Epitaxial Strain

Electronic structure of La2/3Sr1/3MnO3 : Interplay of oxygen octahedra rotations and epitaxial strain

2019 ◽  
Vol 99 (19) ◽  
Author(s):  
Martin Zahradník ◽  
Thomas Maroutian ◽  
Martin Zelený ◽  
Lukáš Horák ◽  
Georg Kurij ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Oxygen Octahedra ◽  
Epitaxial Strain

Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin films

2015 ◽  
Vol 3 (8) ◽  
pp. 1835-1845 ◽  
Author(s):  
P. S. Sankara Rama Krishnan ◽  
Jeffery A. Aguiar ◽  
Q. M. Ramasse ◽  
D. M. Kepaptsoglou ◽  
W.-I. Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Density Functional ◽  
Bismuth Ferrite ◽  
Mixed Phase ◽  
Epitaxial Strain ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Local Electronic Structure ◽  
Ferrite Thin Films

A combination of atom column-by-column scanning transmission electron microscopy and density functional theory shows how epitaxial strain alters the local electronic structure in mixed phase bismuth ferrite thin films.

scholarly journals Electronic structure and optical properties of Sr2IrO4 under epitaxial strain

2019 ◽  
Vol 21 (1) ◽  
pp. 013036 ◽  
Author(s):  
Churna Bhandari ◽  
Zoran S Popović ◽  
S Satpathy
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Epitaxial Strain

scholarly journals Tuning electronic structure via epitaxial strain in Sr2IrO4 thin films

2013 ◽  
Vol 102 (14) ◽  
pp. 141908 ◽  
Author(s):  
J. Nichols ◽  
J. Terzic ◽  
E. G. Bittle ◽  
O. B. Korneta ◽  
L. E. De Long ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Epitaxial Strain

Investigation of the Electronic Structure of BiFeO3 Epitaxial Films by Polarized X-Ray Absorption Spectroscopy

2015 ◽  
Vol 815 ◽  
pp. 183-187
Author(s):  
H.B. Wang ◽  
Z.L. Luo ◽  
Y.Q. Dong ◽  
Z.L. Zhao ◽  
Y.J. Yang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Absorption Spectroscopy ◽  
Structural Difference ◽  
Epitaxial Films ◽  
Strain Effect ◽  
X Ray ◽  
Epitaxial Strain ◽  
Two Samples ◽  
Local Electronic Structure ◽  
X Ray Absorption

To investigate the epitaxial strain effect on local electronic structure of FeO6octahedron of BiFeO3epitaxial film, polarization-dependent FeL23-edge x-ray absorption spectroscopy studies were performed on both tetragonal (T)-like BFO/LAO and rhombohedral (R)-like BFO/STO epitaxial films. Charge transfer multiplet theory based fittings were also performed to reveal the local electronic structure difference. Due to dramatic structural difference caused by epitaxial strain between these two samples, significant electronic structure differences were observed between these two specimens. For BFO/LAO, anisotropic electronic structure appears in vertically-elongated FeO6octahedron and an additional shift of Fe ion off the central position is suggested. For BFO/STO, electronic structure is almost isotropic.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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