Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared

2015 ◽  
Vol 106 (25) ◽  
pp. 251903 ◽  
Author(s):  
Yu Fang ◽  
Zhengguo Xiao ◽  
Xingzhi Wu ◽  
Feng Zhou ◽  
Junyi Yang ◽  
...  
2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.


1990 ◽  
Vol 159 (1) ◽  
pp. 181-189 ◽  
Author(s):  
J. L. Oudar ◽  
B. Sfez ◽  
R. Kuszelewicz ◽  
J. C. Michel ◽  
R. Azoulay

2011 ◽  
Vol 1293 ◽  
Author(s):  
I. C. Khoo ◽  
J. Huang ◽  
S. Zhou ◽  
J. Liou ◽  
K. L. Hong ◽  
...  

ABSTRACTWe present the results and critical analyses of recent studies of ultrafast optical nonlinearities of liquid crystals in the isotropic and ordered phases for time scales spanning femtoseconds – microseconds. Pure undoped liquid crystals as well as liquid crystals containing plasmonic nano-particles have been investigated. Individual molecular electronic optical nonlinearities are found to be useful for femtoseconds – nanoseconds nonlinear transmission clamping applications. On the other hand, laser induced order parameter and birefringence modification in aligned nematic cells allow very rapid transmission switching of visible as well as near infrared lasers with response times in the sub-microseconds - few nanoseconds regime.


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