High refractive index composite for broadband antireflection in terahertz frequency range

2015 ◽  
Vol 106 (23) ◽  
pp. 231107 ◽  
Author(s):  
Xuecheng Wang ◽  
Yunzhou Li ◽  
Bin Cai ◽  
YiMing Zhu
Keyword(s):  
Refractive Index ◽  
High Refractive Index ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range ◽  
Broadband Antireflection

Active modulation of refractive index by stress in the terahertz frequency range

2013 ◽  
Vol 52 (25) ◽  
pp. 6364 ◽  
Author(s):  
Lin’an Li ◽  
Wei Song ◽  
Zhiyong Wang ◽  
Shibin Wang ◽  
Mingxia He ◽  
...  
Keyword(s):  
Refractive Index ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

scholarly journals Complex Refractive Index of Strontium Titanate in the Terahertz Frequency Range

2019 ◽  
Vol 7 (4) ◽  
pp. 71-80 ◽  
Author(s):  
V. R. Bilyk ◽  
K. A. Grishunin
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Strontium Titanate ◽  
Time Domain ◽  
Complex Refractive Index ◽  
Complex Dielectric Constant ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Time Domain Spectroscopy ◽  
Terahertz Frequency Range

The recent progress in terahertz time-domain spectroscopy enables the accurate and reliable measurements of dielectric properties in comparison with the traditional far-infrared spectroscopy using an incoherent light source. The broadband THz-TDS is a powerful tool to determine the real and imaginary parts of a complex dielectric constant by the transmission which allows to detect the parameters of the soft modes in ferroelectrics. In this work, the terahertz time-domain spectroscopy was used to investigate the dependence of the complex refractive index of a single-crystal quantum paraelectric strontium titanate in the terahertz frequency range from 0.3 to 2 THz. It was shown that the low-frequency terahertz response of the material is determined by the soft phonon mode TO1. The measured experimental dependences showed a good agreement with the theoretical curves obtained from the analysis of the Lorentz oscillator model for the complex dielectric constant of strontium titanate. The obtained results are necessary for understanding the principle of possibility to manipulate the order parameter in ferroelectric materials and can be used to create energy-efficient memory devices with a speed of recording information close to the theoretical limit.

FORM BIREFRINGENT STRUCTURES MATCHING TO FREE SPACE IN THE TERAHERTZ FREQUENCY RANGE

2015 ◽  
Vol 74 (19) ◽  
pp. 1767-1776 ◽  
Author(s):  
V. I. Bezborodov ◽  
O.S. Kosiak ◽  
Ye. M. Kuleshov ◽  
V. V. Yachin
Keyword(s):  
Free Space ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

HIGH FREQUENCY OHMIC LOSSES IN TERAHERTZ FREQUENCY RANGE CW KLYNOTRONS

2017 ◽  
Vol 76 (10) ◽  
pp. 929-940 ◽  
Author(s):  
Yu. S. Kovshov ◽  
S. S. Ponomarenko ◽  
S. A. Kishko ◽  
A. A. Likhachev ◽  
S. A. Vlasenko ◽  
...  
Keyword(s):  
High Frequency ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range ◽  
Ohmic Losses

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

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