Dominant conduction mechanism in NiO-based resistive memories

2015 ◽  
Vol 117 (22) ◽  
pp. 225701 ◽  
Author(s):  
Tatsuya Iwata ◽  
Yusuke Nishi ◽  
Tsunenobu Kimoto
Keyword(s):  
Conduction Mechanism ◽  
Dominant Conduction Mechanism

Frequency spectrum of the electrical properties of seawater-saturated ocean crust and oceanic island basalts

1978 ◽  
Vol 15 (9) ◽  
pp. 1489-1495 ◽  
Author(s):  
M. J. Drury
Keyword(s):  
Electrical Properties ◽  
Frequency Spectrum ◽  
Conduction Mechanism ◽  
Oceanic Island ◽  
Pore Fluid ◽  
Membrane Polarization ◽  
Conduction Mechanisms ◽  
Metallic Mineral ◽  
Dominant Conduction Mechanism ◽  
Oceanic Island Basalts

The frequency spectrum of electrical properties of seawater-saturated oceanic crust and oceanic island basalts has been studied. All samples showed at least two of three possible polarization mechanisms: dielectric, membrane, and electrode. The membrane polarization appears to result from the presence of clay minerals, which frequently line or block pores and cracks in the samples. The dominant conduction mechanism in the samples is pore fluid (seawater) conduction, but the electrical properties of samples containing clay are modified by the clay. The results support the suggestion by Drury that a model of three conduction mechanisms acting approximately in parallel—pore fluid, clay mineral, and metallic mineral conduction—describes the electrical properties of seawater-saturated basalts.

scholarly journals Electrical Conduction in Some Nickelates

2011 ◽  
Vol 8 (1) ◽  
pp. 83-90
Author(s):  
Kanchan Gaur ◽  
Shalini Shalini ◽  
Satyendra Singh
Keyword(s):  
Temperature Region ◽  
Conduction Mechanism ◽  
Charge Carriers ◽  
Band Model ◽  
Orthorhombic Unit Cell ◽  
Dominant Conduction Mechanism ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Lower Temperature Region ◽  
Band Type

This paper reports electrical conductivity (s) and Seebeck coefficient (s) study on rare-earth nickelates RNiO3 where R = Nd, Sm and Eu in the temperature range 400-1200 K. They have orthorhombic unit cell. The majority charge carriers are holes throughout the measurement. Both s and S variations show three regions. In higher temperature region (Above 1000K) dominant conduction mechanism is intrisic band type whereas below this temperature, hopping of holes from Ni3+ to Ni2+ centres takes place. In lower temperature region, the electrical conductions is taken over by acceptor type impurities. The conduction mechanism is explained on the basis of every band model. Break temperatures as well as mobility have also been evaluated.

scholarly journals Структура и электрические свойства тонких пленок (ZnO/SiO-=SUB=-2-=/SUB=-)-=SUB=-25-=/SUB=-

2019 ◽  
Vol 53 (11) ◽  
pp. 1505
Author(s):  
М.Н. Волочаев ◽  
Ю.Е. Калинин ◽  
М.А. Каширин ◽  
В.А. Макагонов ◽  
С.Ю. Панков ◽  
...  
Keyword(s):  
Thin Films ◽  
Conduction Mechanism ◽  
Chemical Interaction ◽  
Deposition Process ◽  
Localized States ◽  
Amorphous Sio2 ◽  
Density Of Localized States ◽  
Dominant Conduction Mechanism ◽  
Temperature Dependences ◽  
Consistent Change

Multilayer (ZnO/SiO2)25 thin films with a bilayer thickness of 6 to 10 nm has been synthesized in a single deposition process. The structure of the films consist of nanocrystalline ZnO layers and layers of amorphous SiO2. An analysis of the temperature dependences of the electrical resistivity, showed that a consistent change of the dominant conduction mechanism are realized in (ZnO/SiO2)25 thin films at temperatures 77 – 300 K: variable length hopping mechanism in a narrow energy band near the Fermi level at temperatures 77 – 250 K changed by the thermal activated impurity conductivity at close to room temperatures. The density of localized states and the activation energy of impurity conductivity has been estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films has been investigated. It was found that the chemical interaction between the ZnO and SiO2 layers occurs at 580–600°C. It accompanied by the destruction of the multilayer structure and the appearance of the chemical compound Zn2SiO4 with the tetragonal structure (I-42d space group).

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

2019 ◽  
Vol 963 ◽  
pp. 324-327 ◽  
Author(s):  
Hideharu Matsuura ◽  
Rinya Nishihata ◽  
Akinobu Takeshita ◽  
Tatsuya Imamura ◽  
Kota Takano ◽  
...  
Keyword(s):  
Hall Coefficient ◽  
Low Temperatures ◽  
Conduction Mechanism ◽  
Amorphous Semiconductors ◽  
The Other ◽  
Hopping Conduction ◽  
Sign Inversion ◽  
Dominant Conduction Mechanism ◽  
Change Temperature ◽  
Band Conduction

The temperature dependencies of the resistivity and Hall coefficient for heavily Al-doped 4H-SiC epilayers with Al concentration (CAl) higher than 2×1019 cm-3 were investigated. The signs of measured Hall coefficients (RH) change from positive to negative at low temperatures. For the epilayers with CAl < 3×1019 cm-3 the sign inversion occurred in the hopping conduction region, which was reported to be explicable using the model for amorphous semiconductors. For the epilayers with CAl > 3×1019 cm-3, on the other hand, the sign inversion occurred in the band conduction region, which is a striking feature, because the movement of free holes in the valence band should make RH positive. The sign-inversion temperature increased with increasing CAl, while the dominant-conduction-mechanism-change temperature was almost independent of CAl.

A High Schottky Barrier Contact of Metallic Amorphous Si-P on P-Type Si

1986 ◽  
Vol 77 ◽  
Author(s):  
T. Ogino ◽  
M. Sakaue ◽  
Y. Amemiya
Keyword(s):  
Solid Solution ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Conduction Mechanism ◽  
Schottky Contact ◽  
Variable Range Hopping ◽  
Dominant Conduction Mechanism ◽  
Amorphous Si ◽  
P Type ◽  
Solid Solution Film

ABSTRACTA high Schottky barrier contact is formed when amorphous Si-P solid solution film and p-type Si are brought into contact. Amorphous Si-P films were deposited by thermal decomposition of a Si2H6-PH3 mixture at 500°C. It was found that conductivity increases rapidly when PH3/Si2H6, is increased from 0.2 to 2. When PH3/i2H6 = 2, conductivity is 0.15 S/cm, and the dominant conduction mechanism is variable-range hopping. Barrier height of amorphous Si-P/p-type Si Schottky contact is estimated to be 0.8 – 0.85 V. This value exceeds the barrier height formed by any normal metal.

Charge Transport Mechanism and the Effects of Device Temperature on Electrical Parameters of Au/ZnPc/N-Si Structures

2010 ◽  
Vol 442 ◽  
pp. 372-380 ◽  
Author(s):  
A. Hussain ◽  
P. Akhter ◽  
A.S. Bhatti
Keyword(s):  
Data Analysis ◽  
Charge Transport ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Conduction Mechanism ◽  
Series Resistance ◽  
Zinc Phthalocyanine ◽  
Dominant Conduction Mechanism ◽  
Diode Ideality Factor

Gold/Zinc Phthalocyanine/n-Si metal semiconductor contact with organic interfacial layer have been developed and characterized by Current–Voltage-Temperature (I-V-T) measurements, to study its junction and charge transport properties. The junction parameters, of diode ideality factor (n), barrier height (b) and series resistance (R¬S), of the device are found to shift with device temperature. The barrier height and the diode ideality factor are found to increase and the series resistance is found to decrease with increasing device temperature. The activation energy of the charge carriers is found to be 44 meV and the peak of interface state energy distribution curves is found to shift in terms of Ess-Ev value from 0.582 eV to 0.776 eV with increasing device temperature. The data analysis implies that the Fermi level of the organic interfacial layer shifts as function of device temperature by 100 meV in the device temperature range of 283K to 343K. In terms of dominant conduction mechanism, the I-V-T data analysis confirms the fit of data to the relationship log (IV4)  V1/2 for higher device temperatures and the Poole-Frenkel type is found to be the dominant conduction mechanism for the hybrid device.

scholarly journals Analysis of AC-Conductivity in Chalcogenide Ge10Se20 Bi80Thin Film

2016 ◽  
Vol 13 (2) ◽  
pp. 110-115 ◽  
Author(s):  
Shiveom Srivastav
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Conduction Mechanism ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Melt Quenching ◽  
Thermal Evaporation Method ◽  
Correlated Barrier Hopping ◽  
Dominant Conduction Mechanism

The alloy Ge10Se20 Bi80 has been prepared. Thin films of Ge10Se20 Bi80 has been prepared via a thermal evaporation method (melt quenching technique) with 3000A thickness, and rate of deposition (4.1) A/sec at pressure 2x10-5 Torr. The A.C electrical conductivity of a- thin films Ge10Se20 Bi80 has been studied as a function of frequency for annealing temperature within the range (423-623) K, the deduced exponent s values, was found to decrease with increasing of annealing temperature through the frequency of the range (102-106) Hz. It was found that, the correlated barrier hopping (CBH) is the dominant conduction mechanism. Values of dielectric constant ε1 and dielectric loss ε2 were found to decrease with frequency and increase with temperature. The activation energies have been calculated for the annealed thin films.

Characterization of Electrodeposited Molybdenum Black Surface Coatings

1989 ◽  
Vol 44 (6) ◽  
pp. 533-537 ◽  
Author(s):  
Kostas S. Farmakis ◽  
Ioannis G. Poulios
Keyword(s):  
Energy Spectrum ◽  
Conduction Mechanism ◽  
Visible Region ◽  
Surface Coatings ◽  
Thin Coating ◽  
Emission Mechanism ◽  
Electrochemical Processes ◽  
Dominant Conduction Mechanism ◽  
Black Surface

Molybdenum black has been produced in thin coating form (3 μm) on prepared aluminium surfaces by the method of electrodeposition. The microstructure of the coating has been identified as one of flat irregular platelets belonging to a material which can be described as quasi-amorphous. Its chemical composition is 90 wt% MoO2 · 2 H2O and 10 wt% Ni(OH)2 · Mo-black appears to be a good absorber of solar radiation. Absorbance values as high as 93% have been measured for the visible region of the solar energy spectrum. It has been identified that the coating is of semiconducting nature and that the dominant conduction mechanism is the Schottky emission mechanism. Photoelectrochemical measurements have finally provided evidence for photon-induced electrochemical processes at the Mo-black electrodes.

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