scholarly journals Hall effect measurements on thermoelectric Ca3Co4O9: On how to determine the charge carrier concentration in strongly correlated misfit cobaltites

2015 ◽  
Vol 117 (20) ◽  
pp. 205103 ◽  
Author(s):  
Matthias Schrade ◽  
Truls Norby ◽  
Terje G. Finstad
Keyword(s):  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Strongly Correlated ◽  
Hall Effect Measurements

Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
B.S. So ◽  
Y.H. You ◽  
H.J. Kim ◽  
Y.H. Kim ◽  
J.H. Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Charge Carrier Concentration ◽  
Furnace Temperature ◽  
Ion Activation ◽  
Hall Effect Measurements

AbstractActivation of polycrystalline silicon (poly-Si) thin films doped as n-type using selective ion implantation of phosphorous was performed employing field-enhanced rapid thermal annealing where rapid thermal annealing of halogen lamps is combined with alternating magnetic fields. The ion activation was evaluated using Hall effect measurements incorporating the resistivity, the charge carrier concentration, and the mobility. Statistical design of experiments is attempted in order to clarify the effects and interactions of processes variables on field-enhanced rapid thermal annealing towards ion activation: the three processing variables are furnace temperature, power of halogen lamp, and the alternating magnetic field. Hall effect measurements indicate that the furnace temperature and RTA power are found to be dominant in activating the doped polycrystalline Si in dose. The activation process results from the competition between charge carrier concentration and mobility: the increase in mobility is larger than the decrease in charge carrier concentration.

μSR and Hall-Effect Studies of the Charge Carrier Concentration in Hydrogenated YBa 2 Cu 3 O 7

1991 ◽  
Vol 15 (3) ◽  
pp. 355-360 ◽  
Author(s):  
H Glückler ◽  
Ch Niedermayer ◽  
G Nowitzke ◽  
E Recknagel ◽  
J Erxmeyer ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Charge Carrier Concentration

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

The influence of composition on polymorphism, structure and charge carrier concentration in TL-2201.

1994 ◽  
Vol 235-240 ◽  
pp. 539-540
Author(s):  
C. Ström ◽  
S.-G. Eriksson ◽  
J. Albertsson ◽  
N. Winzek
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration

scholarly journals Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy

2010 ◽  
Vol 18 (25) ◽  
pp. 26206 ◽  
Author(s):  
Rainer Jacob ◽  
Stephan Winnerl ◽  
Harald Schneider ◽  
Manfred Helm ◽  
Marc Tobias Wenzel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantitative Determination ◽  
Carrier Concentration ◽  
Near Field ◽  
Charge Carrier Concentration ◽  
Field Spectroscopy ◽  
Ion Implanted
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