scholarly journals Thermal conductivity, electrical conductivity, and thermoelectric properties of CdTe and Cd0.8Zn0.2Te crystals between room temperature and 780oC

AIP Advances ◽  
2015 ◽  
Vol 5 (5) ◽  
pp. 057118 ◽  
Author(s):  
Ching-Hua Su
2021 ◽  
Author(s):  
◽  
Michael Ng

<p>Energy consumption worldwide is constantly increasing, bringing with it the demand for low cost, environmentally friendly and efficient energy technologies. One of these promising technologies is thermoelectrics in which electric power is harvested from waste heat energy. The efficiency of a thermoelectric device is determined by the dimensionless figure of merit ZT = σS²T/k where σ is the electrical conductivity, S is the thermopower, k is the thermal conductivity, and T is the average temperature. In this thesis we investigate the use of nanostructuring, which has been known to lead to significant reduction in the lattice thermal conductivity to maximise the figure of merit.  One of the most successful bulk thermoelectric materials is Bi₂Te₃, with a ZT of unity at room temperature. Here we investigate the effects of nanostructuring on the thermoelectric properties of Bi₂Te₃. Sub-100 nm ₂Te₃ nanoparticles were successfully synthesized and the figure of merit was found to be ZT ~ 5X10⁻⁵ at room temperature. The effect of a ligand exchange treatment to replace the long chain organic ligand on the as-synthesized nanoparticles with a short chain alkyl ligand was explored. After ligand exchange treatment with hydrazine the figure of merit of sub-100 nm Bi₂Te₃ was found to increase by two fold to ZT ~ 1X10⁻⁴ at room temperature. Overall the figure of merit is low compared to other nanostructured Bi₂Te₃, this was attributed to the extremely low electrical conductivity. The thermopower and thermal conductivity were found to be ~96 μVK⁻¹ and ~0.38 Wm⁻¹ K⁻¹ at 300 K respectively, which show improvements over other nanostructured Bi₂Te₃.  Further optimisation of the figure of merit was also investigated by incorporating Cu, Ni and Co dopants. The most successful of these attempts was Co in which 14.5% Co relative to Bi was successfully incorporated into sub-100 nm Bi₂Te₃. The figure of merit of nanostructured Bi₁.₇₁Co₀.₂₉Te₁.₇₁ alloy was found to increase by 40% to a ZT ~ 1.4X10⁻⁴ at room temperature. Although overall the figure of merit is low, the effect of Co alloying and hydrazine treatment shows potential as a route to optimise the figure of merit.  A potential novel material for thermoelectrics applications is inorganicorganic perovskite single crystals. Here we report a synthetic strategy to successfully grow large millimetre scale single crystals of MAPbBr₃₋xClx, FAPbBr₃₋xClx, and MAPb₁-xSnxBr₃ (MA = methylammonium and FA = formamidinium) using inverse temperature crystallisation (ITC) in a matter of days. This is the first reported case of mixed Br/Cl single crystals with a FA cation and mixed Pb/Sn based perovskites grown using ITC. The bandgap of these single crystals was successfully tuned by altering the halide and metal site composition. It was found that single crystals of FAPbBr₃₋xClx were prone to surface degradation with increased synthesis time. This surface degradation was observed to be reversible by placing the single crystals in an antisolvent such as chloroform.  A tentative model was proposed to analyse the IV characteristics of the single crystal perovskites in order to extract mobilities and diffusion lengths. The MAPbBr₃ and MAPbBr₂.₅Cl₀.₅ single crystal mobilities were found to be between 30-390 cm² V⁻¹ s⁻¹ and 10-100 cm² V⁻¹ s⁻¹ respectively, the diffusion lengths were found to be between 2-8 μm and 1-4 μm respectively. This is an improvement over polycrystalline thin film perovskites and comparable to other single crystal perovskites. The conductance of MAPb₁-xSnxBr₃ based perovskites was found to increase by 2 orders of magnitude even with just 1% of Sn incorporated. The thermal conductivity of MAPbBr₃ single crystals was found to be ~1.12 Wm⁻¹ K⁻¹ at room temperature which is reasonable low for single crystals, however no other thermoelectric properties could be measured due to the self cleaving nature of the single crystals with decreasing temperature and the high resistivity of the material.</p>


1999 ◽  
Vol 604 ◽  
Author(s):  
Noriyuki Takashima ◽  
Yasuo Azuma ◽  
Jun-Ichi Matsushita

AbstractSeveral silicon boride phases such as SiB4, SiB6, SiB6-x, SiB6+x, and Si11B31, were previously reported. Among them, SiB6has proved to be a potentially useful material because of its excellent electrical conductivity, high degree of hardness, moderate melting point, and low specific gravity. The sintering conditions and thermoelectric properties of silicon boride (SiB6) ceramics produced by hot pressing were investigated in order to determine the suitability of this material for high-temperature thermoelectric applications as a smart material. The relative density increased with increasing sintering temperature. With a sintering temperature of 1923 K, a sintered body having a relative density of more than 99% was obtained. X-ray diffraction analysis showed no crystalline phase other than SiB6 in the sintered body. The specimens were prepared for measurement of the electrical conductivity and Seebeck coefficient by the D.C. four-terminal method. The thermal conductivity of SiB6 was obtained by calculation from the thermal diffusivity and specific heat capacity of the specimen. The electrical conductivity of SiB6 increased with increasing temperature. The electrical conductivity of the polycrystalline SiB6 (99% dense) was 0.5 to 1.1 × 103 S/m at 298 to 1273 K. The thermal conductivity decreased with increasing temperature in the range of room temperature to 1273 K. The thermal conductivity was 9.1 to 2.5 W/mK in the range of room temperature to 1273 K. The Seebeck coefficient of SiB6 increased with increasing temperature. The Seebeck coefficient of SiB6 was 140 × 10−6 V/K at 1273 K. The figure of merit Z of SiB6 increased with increasing temperature. The Z of SiB6 reached 8.1 × 10−6/K at 1273 K. The ZT value is useful to evaluate the ability of thermoelectric materials. The ZT value reached 0.01 at 1273 K. Based on the results, SiB6 showed very good thermoelectric material characteristics at high temperature.


2007 ◽  
Vol 1044 ◽  
Author(s):  
Aurelie Gueguen ◽  
Pierre Ferdinand Poudeu Poudeu ◽  
Robert Pcionek ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
...  

AbstractThe thermoelectric properties of materials with compositions NaPb18-xSnxMTe20 (M=Sb, Bi, x=0, 3, 5, 9, 13, 16 and 18) were investigated in the temperature range 300-670K. All compositions exhibited p-type behavior over the measured temperature range. Electronic properties and transport were tuned through the manipulation of the Pb/Sn ratio. Increasing the Sn fraction results in an increase in electrical conductivity and a decrease in thermopower. The compositions NaPb13Sn5SbTe20 and NaPb9Sn9SbTe20 show a lattice thermal conductivity of ∼1 W/m/K at room temperature.


2000 ◽  
Vol 626 ◽  
Author(s):  
A. L. Pope ◽  
R. Gagnon ◽  
R. Schneidmiller ◽  
P. N. Alboni ◽  
R. T. Littleton ◽  
...  

ABSTRACTPartially due to their lack of periodic structure, quasicrystals have inherently low thermal conductivity on the order of 1 - 3 W/m-K. AlPdMn quasicrystals exhibit favorable room temperature values of electrical conductivity, 500–800 (Ω-cm)-1, and thermopower, 80 μV/K, with respect to thermoelectric applications. In an effort to further increase the thermopower and hopefully minimize the thermal conductivity via phonon scattering, quartenary Al71Pd21Mn8-XReX quasicrystals were grown. X-ray data confirms that the addition of a fourth element does not alter the quasiperiodicity of the sample. Al71Pd21Mn8-XReX quasicrystals of varying Re concentration were synthesized where x had values of 0, 0.08, 0.25, 0.4, 0.8, 2, 5, 6, and 8. Both thermal and electrical transport property measurements have been performed and are reported.


2021 ◽  
Author(s):  
◽  
Michael Ng

<p>Energy consumption worldwide is constantly increasing, bringing with it the demand for low cost, environmentally friendly and efficient energy technologies. One of these promising technologies is thermoelectrics in which electric power is harvested from waste heat energy. The efficiency of a thermoelectric device is determined by the dimensionless figure of merit ZT = σS²T/k where σ is the electrical conductivity, S is the thermopower, k is the thermal conductivity, and T is the average temperature. In this thesis we investigate the use of nanostructuring, which has been known to lead to significant reduction in the lattice thermal conductivity to maximise the figure of merit.  One of the most successful bulk thermoelectric materials is Bi₂Te₃, with a ZT of unity at room temperature. Here we investigate the effects of nanostructuring on the thermoelectric properties of Bi₂Te₃. Sub-100 nm ₂Te₃ nanoparticles were successfully synthesized and the figure of merit was found to be ZT ~ 5X10⁻⁵ at room temperature. The effect of a ligand exchange treatment to replace the long chain organic ligand on the as-synthesized nanoparticles with a short chain alkyl ligand was explored. After ligand exchange treatment with hydrazine the figure of merit of sub-100 nm Bi₂Te₃ was found to increase by two fold to ZT ~ 1X10⁻⁴ at room temperature. Overall the figure of merit is low compared to other nanostructured Bi₂Te₃, this was attributed to the extremely low electrical conductivity. The thermopower and thermal conductivity were found to be ~96 μVK⁻¹ and ~0.38 Wm⁻¹ K⁻¹ at 300 K respectively, which show improvements over other nanostructured Bi₂Te₃.  Further optimisation of the figure of merit was also investigated by incorporating Cu, Ni and Co dopants. The most successful of these attempts was Co in which 14.5% Co relative to Bi was successfully incorporated into sub-100 nm Bi₂Te₃. The figure of merit of nanostructured Bi₁.₇₁Co₀.₂₉Te₁.₇₁ alloy was found to increase by 40% to a ZT ~ 1.4X10⁻⁴ at room temperature. Although overall the figure of merit is low, the effect of Co alloying and hydrazine treatment shows potential as a route to optimise the figure of merit.  A potential novel material for thermoelectrics applications is inorganicorganic perovskite single crystals. Here we report a synthetic strategy to successfully grow large millimetre scale single crystals of MAPbBr₃₋xClx, FAPbBr₃₋xClx, and MAPb₁-xSnxBr₃ (MA = methylammonium and FA = formamidinium) using inverse temperature crystallisation (ITC) in a matter of days. This is the first reported case of mixed Br/Cl single crystals with a FA cation and mixed Pb/Sn based perovskites grown using ITC. The bandgap of these single crystals was successfully tuned by altering the halide and metal site composition. It was found that single crystals of FAPbBr₃₋xClx were prone to surface degradation with increased synthesis time. This surface degradation was observed to be reversible by placing the single crystals in an antisolvent such as chloroform.  A tentative model was proposed to analyse the IV characteristics of the single crystal perovskites in order to extract mobilities and diffusion lengths. The MAPbBr₃ and MAPbBr₂.₅Cl₀.₅ single crystal mobilities were found to be between 30-390 cm² V⁻¹ s⁻¹ and 10-100 cm² V⁻¹ s⁻¹ respectively, the diffusion lengths were found to be between 2-8 μm and 1-4 μm respectively. This is an improvement over polycrystalline thin film perovskites and comparable to other single crystal perovskites. The conductance of MAPb₁-xSnxBr₃ based perovskites was found to increase by 2 orders of magnitude even with just 1% of Sn incorporated. The thermal conductivity of MAPbBr₃ single crystals was found to be ~1.12 Wm⁻¹ K⁻¹ at room temperature which is reasonable low for single crystals, however no other thermoelectric properties could be measured due to the self cleaving nature of the single crystals with decreasing temperature and the high resistivity of the material.</p>


1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.


2021 ◽  
Vol 317 ◽  
pp. 28-34
Author(s):  
Joon Hoong Lim

Thermoelectric materials has made a great potential in sustainable energy industries, which enable the energy conversion from heat to electricity. The band structure and thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 have been investigated. The bulk pellets were prepared from analytical grade ZnO, NiO and Fe2O3 powder using solid-state method. It was possible to obtain high thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 by controlling the ratios of dopants and the sintering temperature. XRD analysis showed that the fabricated samples have a single phase formation of cubic spinel structure. The thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 pellets improved with increasing Ni. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 (x = 0.0) is (0.515 x10-3 Scm-1). The band structure shows that ZnxCu1-xFe2O4 is an indirect band gap material with the valence band maximum (VBM) at M and conduction band minimum (CBM) at A. The band gap of Ni(x)Zn(1-x)Fe2O4 increased with increasing Ni content. The increasing band gap correlated with the lower electrical conductivity. The thermal conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The presence of Ni served to decrease thermal conductivity by 8 Wm-1K-1 over pure samples. The magnitude of the Seebeck coefficient for Ni(x)Zn(1-x)Fe2O4 pellets increased with increasing amounts of Ni. The figure of merit for Ni(x)Zn(1-x)Fe2O4 pellets and thin films was improved by increasing Ni due to its high Seebeck coefficient and low thermal conductivity.


2021 ◽  
Author(s):  
Bo Feng

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.


2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.


2012 ◽  
Vol 501 ◽  
pp. 319-323
Author(s):  
Hasan A. Alwi ◽  
Lay S. Ewe ◽  
Zahari Ibrahim ◽  
Noor B. Ibrahim ◽  
Roslan Abd-Shukor

We report the room temperature thermal conductivity κ and thermal diffusivity α of polycrystalline La0.7Ca0.3-xSrxMnO3 for x = 0 to 0.1. The samples were prepared by heating at 1220 and 1320oC. The insulator-metal transition temperature, TIM and thermal diffusivity increased with Sr content. Phonon was the dominant contributor to thermal conductivity and the electronic contribution was less than 1%. Enhancement of electrical conductivity σ and thermal diffusivity for x ≥ 0.08 was observed in both series of samples. The grain size of the samples (28 to 46 µm) does not show any affect on the thermal and electrical properties.


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