Influence of spray deposited TiO2 film thickness on the performance of n-TiO2/p-Si low cost hetero-junction solar cell and its utility as a carrier blocking layer

2015 ◽  
Author(s):  
R. Shashidhar ◽  
Basavaraj Angadi ◽  
H. D. Chandra Shekar ◽  
L. C. S. Murthy
Keyword(s):  
Solar Cell ◽  
Film Thickness ◽  
Tio2 Film ◽  
Low Cost ◽  
Blocking Layer ◽  
Junction Solar Cell

scholarly journals Performance improvement of dye-sensitized solar cell by introducing Sm3+/Y3+ co-doped TiO2 film as an efficient blocking layer

2017 ◽  
Vol 631 ◽  
pp. 141-146 ◽  
Author(s):  
Yiying Qin ◽  
Zhiqiang Hu ◽  
Boon Han Lim ◽  
Bin Yang ◽  
Kok-Keong Chong ◽  
...  
Keyword(s):  
Solar Cell ◽  
Performance Improvement ◽  
Tio2 Film ◽  
Dye Sensitized Solar Cell ◽  
Blocking Layer ◽  
Doped Tio2 ◽  
Dye Sensitized ◽  
Co Doped

Low Cost Electro-Deposition of Cuprous Oxide P-N Homo-Junction Solar Cell

2013 ◽  
Vol 827 ◽  
pp. 38-43 ◽  
Author(s):  
Faiz Arith ◽  
S.A.M. Anis ◽  
Muzalifah Mohd Said ◽  
Cand M. Idzdihar Idris
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Electrical Energy ◽  
Deposition Process ◽  
Crystal Silicon ◽  
Electro Deposition ◽  
Junction Solar Cell ◽  
P Type

Most of the photovoltaic industry uses wafer of single-crystal and poly-crystal silicon as a material of their photovoltaic (PV) modules. However, the cost of these modules is high due to the material and processing cost. Cuprous oxides (Cu2O) have several features that suitable for future photovoltaic applications. Cu2O can be prepared with simple methods at very low cost. Cu2O p-n homojunction solar cell is a device that converts sunlight to electrical energy, consists of two similar materials for its p-n junction, which is Cu2O. The p-type and n-type of Cu2O thin films are then fabricated to produce solar cells. Other layers aluminium and glass substrate coated with indium tin oxide (ITO) need to be added as a contact for electrons movement. In this study, p-type Cu2O, n-type Cu2O and p-n junction are prepared in order to become accustomed for solar cell applications. To achieve the optimum deposition conditions, p-n junction solar cell is prepared by two-steps electrochemical deposition process. The result from x-ray diffraction (XRD) shows that the peak is dominated by CuO (1, 1, 1). P-n junction is in between the p-type and n-type of Cu2O layer. Al has the thickness of 427.5nm. The second and the third layer are p and n type of Cu2O, which have the thickness of 106.9nm and 92.3nm, respectively. Finally the thickness of ITO layer is 131.1nm.An absorption experiment at AM1 light is performed in order to get the I-V curves, and in fact, to study the electrical solar cells p-n homojunction. Based on I-V curve test, the level of energy conversion of cell is 0.00141% with fill factor, FF 0.94813 which proved that Cu2O p-n homojunction solar cell can be fabricated and produced at very low cost and well function.

Investigation on the Thickness Effect of TiO2 Photo- Anode on Dye-Sensitized Solar Cell Performance

2018 ◽  
Vol 280 ◽  
pp. 76-80 ◽  
Author(s):  
Mian En Yeoh ◽  
Kah Yoong Chan ◽  
Hin Yong Wong
Keyword(s):  
Solar Cell ◽  
Film Thickness ◽  
Low Cost ◽  
Critical Role ◽  
Photovoltaic Performance ◽  
Cell Performance ◽  
Thickness Effect ◽  
Dye Sensitized Solar Cell ◽  
Solar Cell Performance ◽  
Dye Sensitized

Dye-sensitized solar cell (DSSC) has attracted immense interest over the past decade due to its low cost and simplicity as a renewable energy source. In DSSC, the photo-anode that governs the collection and transportation of photo-excited electrons plays a critical role in determining the cell performance. In particular, the thickness of the photo-anode is known to be one of the decisive factors in dictating cell efficiency. In this paper, the thickness effect of TiO2 film as photo-anode on the photovoltaic performance of DSSC is studied. The TiO2 films were characterized by UV-visible absorbance spectroscopy to correlate the film thickness with the light harvesting efficiency of DSSC. The effects of film thickness on the photocurrent density-voltage characteristics of DSSCs were also investigated. The optimized thickness (4m) of the TiO2 film was discovered to be the best compromise between the amount of dye loading and the electron transport resistance.

Progress toward high-efficiency (>24%) and low-cost multi-junction solar cell production

2001 ◽  
Vol 66 (1-4) ◽  
pp. 615-620 ◽  
Author(s):  
P.K Chiang ◽  
C.L Chu ◽  
Y.C.M Yeh ◽  
P Iles ◽  
F Ho
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Cell Production ◽  
Junction Solar Cell

Low-cost rear side floating junction solar-cell issues on mc-Si

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3431-3437 ◽  
Author(s):  
S. De Wolf ◽  
F. Duerinckx ◽  
G. Agostinelli ◽  
G. Beaucarne
Keyword(s):  
Solar Cell ◽  
Low Cost ◽  
Rear Side ◽  
Junction Solar Cell

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

scholarly journals Wireless photoelectrochemical water splitting using triple-junction solar cell protected by TiO2

2021 ◽  
Vol 2 (2) ◽  
pp. 100340
Author(s):  
Choongman Moon ◽  
Brian Seger ◽  
Peter Christian Kjærgaard Vesborg ◽  
Ole Hansen ◽  
Ib Chorkendorff
Keyword(s):  
Solar Cell ◽  
Water Splitting ◽  
Triple Junction ◽  
Photoelectrochemical Water Splitting ◽  
Junction Solar Cell
Sign in / Sign up

Export Citation Format

Share Document