Thermal stability of vapor-deposited stable glasses of an organic semiconductor

2015 ◽  
Vol 142 (13) ◽  
pp. 134504 ◽  
Author(s):  
Diane M. Walters ◽  
Ranko Richert ◽  
M. D. Ediger
Keyword(s):  
Thermal Stability ◽  
Organic Semiconductor ◽  
Stable Glasses ◽  
Thermal Stability Of

Microstructure and thermal stability of amorphous materials in the GeS2−La2S3 system

1991 ◽  
Vol 6 (12) ◽  
pp. 2694-2700 ◽  
Author(s):  
Prashant N. Kumta ◽  
Subhash H. Risbud
Keyword(s):  
Thermal Stability ◽  
Amorphous Materials ◽  
Fiber Optic ◽  
Molecular Level ◽  
Infrared Region ◽  
Mid Infrared ◽  
Heat Treated ◽  
Stable Glasses ◽  
Microstructural Studies ◽  
Thermal Stability Of

GeS2 is known to be a good chalcogenide glass former with a transmission cutoff at 11 μm and has been studied for fiber optic application in the mid infrared region. The rare earth sulfides, oxysulfides, and oxides (La–Er) form reasonably good and stable glasses when mixed with chalcogenides such as Ga2S3. In this work, glass formation was studied in the GeS2−La2S3 system. Two compositions containing 60 mol % and 92.5 mol % GeS2, respectively, were analyzed, and the effects of composition on the microstructure and thermal stability of these glasses were investigated. Microstructural studies were conducted on the as-prepared and heat-treated glasses using TEM and SEM/EDXA. Glasses rich in GeS2 exhibited primary (6–88 nm) and secondary (3–13 nm) phase separation at the molecular level. Differential thermal analysis performed on these glasses indicated glass transition temperatures (Tg) of 510 °C and 420 °C for the two compositions studied. The glasses were stable and the (Tg) was observed to decrease with increasing contents of GeS2 in these glasses.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of

Thermal stability of organic-inorganic nanocomposites based on system of dimethacrylate-tetraethoxysilane and their kinetic features

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inorganic Nanocomposites ◽  
Thermal Stability Of ◽  
Kinetic Features

The effect of salicylates on nonenzymatic glycosylation and thermal stability of collagen in diabetic rats

Diabetes ◽  
1984 ◽  
Vol 33 (8) ◽  
pp. 745-751 ◽  
Author(s):  
D. K. Yue ◽  
S. McLennan ◽  
D. J. Handelsman ◽  
L. Delbridge ◽  
T. Reeve ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diabetic Rats ◽  
Nonenzymatic Glycosylation ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document