GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

2015 ◽  
Vol 106 (10) ◽  
pp. 101102 ◽  
Author(s):  
L. Cerutti ◽  
A. Castellano ◽  
J.-B. Rodriguez ◽  
M. Bahri ◽  
L. Largeau ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Wavelength Range ◽  
Laser Diodes ◽  
Telecom Wavelength

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

2002 ◽  
Vol 81 (13) ◽  
pp. 2334-2336 ◽  
Author(s):  
S. Mogg ◽  
N. Chitica ◽  
R. Schatz ◽  
M. Hammar
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Highly Strained

scholarly journals InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

Nanoscale ◽  
2017 ◽  
Vol 9 (36) ◽  
pp. 13554-13562 ◽  
Author(s):  
H. A. Fonseka ◽  
A. S. Ameruddin ◽  
P. Caroff ◽  
D. Tedeschi ◽  
M. De Luca ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Wavelength Range ◽  
Optical Communication ◽  
Wurtzite Phase ◽  
First Time ◽  
Tunable Emission

Wurtzite phase InP–InxGa1−xAs nanowire radial quantum wells were grown for the first time, with tunable emission in the 1.3–1.55 μm optical communication wavelength range.

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

GaSb-based >3µm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation

2015 ◽  
Vol 424 ◽  
pp. 24-27 ◽  
Author(s):  
Ron Kaspi ◽  
Chunte A. Lu ◽  
Tim C. Newell ◽  
Chi Yang ◽  
Sanh Luong
Keyword(s):  
Quantum Wells ◽  
Compressive Strain ◽  
Laser Diodes ◽  
Strain Compensation

Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

1991 ◽  
Vol 59 (27) ◽  
pp. 3619-3621 ◽  
Author(s):  
H. Jeon ◽  
J. Ding ◽  
W. Patterson ◽  
A. V. Nurmikko ◽  
W. Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Injection Laser
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