Optoelectronic properties and interband transition of La-doped BaSnO3 transparent conducting films determined by variable temperature spectral transmittance

2015 ◽  
Vol 117 (10) ◽  
pp. 103107 ◽  
Keyword(s):  
Interband Transition ◽  
Variable Temperature ◽  
Optoelectronic Properties ◽  
Spectral Transmittance ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
La Doped

Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

2009 ◽  
Vol 6 (5) ◽  
pp. 1109-1111 ◽  
Author(s):  
Shingo Masaki ◽  
Hisayuki Nakanishi ◽  
Mutsumi Sugiyama ◽  
Shigefusa F. Chichibu
Keyword(s):  
Plasma Sputtering ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Helicon Wave ◽  
Doped Zno

Insituinvestigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

1989 ◽  
Vol 54 (21) ◽  
pp. 2088-2090 ◽  
Author(s):  
B. Drevillon ◽  
Satyendra Kumar ◽  
P. Roca i Cabarrocas ◽  
J. M. Siefert
Keyword(s):  
Amorphous Silicon ◽  
Transparent Conducting Oxide ◽  
Optoelectronic Properties ◽  
Transparent Conducting

Tungsten-doped ZnO transparent conducting films deposited by direct current magnetron sputtering

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 184-186 ◽  
Author(s):  
Huafu Zhang ◽  
Hanfa Liu ◽  
Chengxin Lei ◽  
Changkun Yuan ◽  
Aiping Zhou
Keyword(s):  
Magnetron Sputtering ◽  
Direct Current ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Direct Current Magnetron Sputtering ◽  
Doped Zno

Bandgap Engineering of ZnO Transparent Conducting Films

2003 ◽  
Vol 763 ◽  
Author(s):  
K. Matsubara ◽  
H. Tampo ◽  
A. Yamada ◽  
P. Fons ◽  
K. Iwata ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
Bandgap Engineering ◽  
Trade Off ◽  
Glass Substrates ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Average Optical Transmittance ◽  
Mg Content

AbstractLow resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

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