The influence of sintering temperature and silicon carbide percent on the compression properties

2015 ◽  
Author(s):  
Y. Ahmed ◽  
M. Alaalam
Keyword(s):  
Silicon Carbide ◽  
Sintering Temperature ◽  
Compression Properties

scholarly journals Pengaruh Suhu Sintering Terhadap Sintesis Silicon Carbide (SiC) Berbahan Dasar Abu Sekam Padi dan Grafit Pensil 2B

2015 ◽  
Vol 5 (01) ◽  
pp. 31
Author(s):  
Resky Irfanita ◽  
Asnaeni Ansar ◽  
Ayu Hardianti Pratiwi ◽  
Jasruddin J ◽  
Subaer S
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Silicon Carbide ◽  
Rice Husk Ash ◽  
Sintering Temperature ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
Scanning Electron

The objective of this study is to investigate the effect of sintering temperature on the synthesis of SiC produced from rice husk ash (RHA) and 2B graphite pencils. The SiC was synthesized by using solid state reaction method sintered at temperatures of 750°C, 1000°C and 1200°C for 26 hours, 11.5 hours and 11.5 hours, respectively. The quantity and crystallinity level of SiC phase were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC was examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The XRD results showed that the concentration (wt%) of SiC phase increases with the increasing of sintering temperature. SEM results showed that the crystallinity level of SiC crystal is improving as the sintering temperature increases

The Preparation and Properties of Clay Bonded Silicon Carbide by Using Silicon Carbide Dusting Powder

2018 ◽  
Vol 922 ◽  
pp. 143-148 ◽  
Author(s):  
Shao Chun Xu ◽  
Zi Jing Wang ◽  
Ya Ming Zhang ◽  
Qiang Zhi ◽  
Xu Dong Wang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ball Milling ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Raw Materials ◽  
Clay Content ◽  
Good Method ◽  
Sintering Additive ◽  
Carbide Refractory ◽  
Milling Method

In this paper, clay bonded silicon carbide was prepared through pressureless sintering process with silicon carbide dusting powder as raw materials and clay as sintering additive. The effects of the ball-milling method, sintering temperature and clay contents on the density, microstructure and mechanical properties of clay bonded silicon carbide refractory were studied. The planetary ball-milling was a good method to improve the density of the green body, and the density was increased simultaneously with an increase of the clay content. The liquid phase derived from low-melting eutectic mixtures of clay could prevent the superlative oxidation of silicon carbide. The mass increment of sintered samples decreased firstly and then increased at the sintering temperature range from 1250 to 1500 °C. The open porosity of samples decreased with the clay addition at a content range from 10 to 30 wt.%. The bending strength of the samples decreased firstly and then increased with the clay addition increasing. The optimum condition for preparing clay bonded silicon carbide with silicon carbide dusting powder was sintering at 1350 °C with 20 wt.% clay, and the obtained sample with a porosity of 24% achieved the bending strength of 78±7 MPa.

Microporous Ceramics Made by Silicon Carbide Whiskers

2007 ◽  
Vol 336-338 ◽  
pp. 1904-1905
Author(s):  
Chang Hong Dai ◽  
Ru Zhao ◽  
Li Shui ◽  
Bao Bao Zhang
Keyword(s):  
Silicon Carbide ◽  
Flexural Strength ◽  
Pore Size ◽  
Sintering Temperature ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Sintering Aids ◽  
Silicon Carbide Whiskers ◽  
Physical And Chemical ◽  
And Chemical Properties

A new method for preparing microporous ceramics by the silicon carbide whiskers was studied in this paper. The physical and chemical properties and the microstructure of the microporous ceramics were tested, while some influencing factors for the product, such as the amount of sintering aids and sintering temperature, were discussed. The results suggest that the apparent porosity of the microporous ceramics is 55.7-59.8% and the flexural strength is 127-176MPa. The pore distribution of the microporous ceramics is uniformity and the diameter of the pore ranges between 0.5μm and 7μm. The porosity and pore size of the microporous ceramic can be controlled by adjusting the sintering temperature and the amount of sintering aids.

Thermal Shock Resistance of Liquid Phase Sintered SiC

2016 ◽  
Vol 881 ◽  
pp. 103-108
Author(s):  
Roberta Monteiro de Mello ◽  
Ana Helena de Almeida Bressiani
Keyword(s):  
Silicon Carbide ◽  
Liquid Phase ◽  
Thermal Shock ◽  
Water Samples ◽  
Thermal Cycle ◽  
Thermal Shock Resistance ◽  
Sintering Temperature ◽  
Shock Resistance

The aim of this study was to evaluate the effect of Y2O3:Al2O3 additives and sintering temperature on thermal shock resistance of silicon carbide sintered via liquid phase. Silicon carbide samples containing 10 mol% Y2O3:Al2O3 (1:3 and 1:4) were prepared, compacted and sintered at 1750, 1850 and 1950 °C in a graphite resistive furnace. Thermal shock resistance was evaluated after each thermal cycle performed at 600, 750 and 900 °C followed by abrupt cooling in water. Samples with two Y2O3:Al2O3 proportions did not show major differences when sintered at the same temperature, though, rising the sintering temperature improves Y2O3:Al2O3 modified-SiC thermal shock resistance.

Influence of sintering temperature and pressure on the 3C-6H transition of silicon carbide

2019 ◽  
Vol 39 (2-3) ◽  
pp. 150-156 ◽  
Author(s):  
Florimond Delobel ◽  
Sébastien Lemonnier ◽  
Élodie Barraud ◽  
Julien Cambedouzou
Keyword(s):  
Silicon Carbide ◽  
Sintering Temperature ◽  
Temperature And Pressure

scholarly journals Effect of Sintering Temperature on the Properties of Highly Electrical Resistive SiC Ceramics as a Function of Y2O3-Er2O3 Additions

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4768
Author(s):  
Sheng Ge ◽  
Xiumin Yao ◽  
Yingying Liu ◽  
Hang Duan ◽  
Zhengren Huang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Electrical Resistivity ◽  
Sintering Temperature ◽  
Secondary Phase ◽  
Sintering Additive ◽  
Sic Ceramics ◽  
Plasma Sintering ◽  
Spark Plasma

Silicon carbide (SiC) ceramics with Y2O3-Er2O3 as sintering additives were prepared by spark plasma sintering (SPS). The effects of sintering temperatures and Y2O3-Er2O3 contents on the microstructure, thermal conductivity, electrical, and mechanical properties were investigated. The increasing of sintering temperatures promoted the densification of SiC ceramics, thus increasing the thermal conductivity and electrical resistivity. With the increase of the sintering additive contents, the electrical resistivity increased due to the formation of the electrical insulating network; and the thermal conductivity first increased and then decreased, which was related to the content and distribution of the secondary phase among the SiC grains. The SiC ceramics sintered at 2000 °C with 9 wt.% Y2O3-Er2O3 exhibited higher electrical resistivity and thermal conductivity, which were 4.28 × 109 Ω·cm and 96.68 W/m·K, respectively.

Synthesis of Silicon Carbide Powders from Iron Tailings

2009 ◽  
Vol 620-622 ◽  
pp. 237-240
Author(s):  
Xiao Meng Zhang ◽  
Li Hua Xu ◽  
Hong Shun Hao ◽  
Jian Ying Yang ◽  
Fang He
Keyword(s):  
Silicon Carbide ◽  
Flow Rate ◽  
Carbothermal Reduction ◽  
Reduction Method ◽  
Sintering Temperature ◽  
Holding Time ◽  
Carbon Addition ◽  
Argon Flow Rate ◽  
Argon Flow ◽  
Main Impurity

Silicon carbide powders were prepared by the carbothermal reduction method. The starting powders used were iron tailings and graphite. The XRD results showed that the main crystal phase was SiC and the main impurity was FexSiy in as-fabricated silicon carbide. The SEM results revealed that the grains of SiC-phase in as-fabricated silicon carbide were flaky-like or globular-like. It is found that the carbon addition and the reaction temperature play a key role to obtain SiC-phase, while the holding time and argon flow rate had a little effect on the yield of SiC as the excessive carbon addition are used. The optimum sintering temperature, holding time, argon flowing rate, the ratio of n(C): n(SiO2) are 1500 °C, 8 h, 0.6 L/min, 5:1, respectively.

scholarly journals Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1090
Author(s):  
Maoqiang Rui ◽  
Yaxiang Zhang ◽  
Jing Ye
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Argon Atmosphere ◽  
Environment Friendly ◽  
Silicon Melt ◽  
Different Temperatures ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

Reaction-bonded silicon carbide ceramics were sintered by infiltration of Si and B–Si alloy under an argon atmosphere at different temperatures. The element boron was added to the silicon melt to form a B–Si alloy first. The mechanical properties of samples were improved by infiltration of the B–Si melt. The samples infiltrated with the Si-only melt were found to be very sensitive to experimental temperature. The bending strengths of 58.6 and 317.0 MPa were achieved at 1530 and 1570 °C, respectively. The sample made by infiltration of B–Si alloy was successfully sintered at 1530 °C. The relative density of the sample was more than 90%. The infiltration of B–Si alloy reduced the sintering temperature and the bending strength reached 326.9 MPa. The infiltration mechanism of B–Si alloy is discussed herein.

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