Single-phase quaternary MgxZn1−xO1−ySy alloy thin films grown by pulsed laser deposition

2015 ◽  
Vol 117 (6) ◽  
pp. 065301 ◽  
Author(s):  
Yunbin He ◽  
Hailing Cheng ◽  
Jiali Tai ◽  
Lei Li ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

In Situ Synthesis of Single-Phase Skutterudite Thin Films (CoSb3 and IrSb3) by Pulsed Laser Deposition

1998 ◽  
Vol 526 ◽  
Author(s):  
J.C. Caylor ◽  
A.M. Stacy ◽  
P. Bandaru ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical Measurements ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
High Vapor

AbstractRecent advances in doping and substitutional alloying of bulk skutterudite phases based on the CoAs3 structure have yielded compositions with high thermoelectric figures-of-merit (“ZT”). It is postulated that further enhancements in ZT may be attained in artificially-structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. This work describes the growth of single-phase skutterudite thin films (CoSb3 and IrSb3) by pulsed laser deposition. A substrate temperature of 250°C has been found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature, the film is depleted of antimony due to its high vapor pressure. However, when films are grown from antimony-rich targets, the substrate temperature can be increased to at least 350°C without losing the skutterudite phase. Films from both target types were characterized with X-ray diffraction and Rutherford-Back-Scattering (RBS) to reveal structure and stoichiometry. Some preliminary electrical measurements will also be shown.

Superconducting single-phase Sr1−xLaxCuO2 thin films with improved crystallinity grown by pulsed laser deposition

2006 ◽  
Vol 89 (9) ◽  
pp. 092504 ◽  
Author(s):  
Victor Leca ◽  
Dave H. A. Blank ◽  
Guus Rijnders ◽  
Sara Bals ◽  
Gustaaf van Tendeloo
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition

THE ROLES OF AMBIENT OXYGEN AND SUBSTRATE TEMPERATURE ON GROWTH OF DIAMOND THIN FILMS BY PULSED LASER DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 825-829 ◽  
Author(s):  
TSUYOSHI YOSHITAKE ◽  
TAKASHI NISHIYAMA ◽  
TAKESHI HARA ◽  
KUNIHITO NAGAYAMA
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Parameters ◽  
Ambient Oxygen ◽  
Diamond Thin Films ◽  
Substrate Temperatures

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

Synchrotron X-ray Diffraction Study of Single-Phase β-AlN Thin Films Heteroepitaxially Grown on Sapphire (0001) Substrates by Pulsed Laser Deposition

2010 ◽  
Vol 49 (2) ◽  
pp. 020212 ◽  
Author(s):  
Kazushi Sumitani ◽  
Ryota Ohtani ◽  
Tomohiro Yoshida ◽  
You Nakagawa ◽  
Satoshi Mohri ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Diffraction Study ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Pulsed laser deposition of single phase n- and p-type Cu2O thin films with low resistivity

2020 ◽  
Vol 193 ◽  
pp. 108848
Author(s):  
Syed Farid Uddin Farhad ◽  
David Cherns ◽  
James A. Smith ◽  
Neil A Fox ◽  
David J. Fermín
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Low Resistivity ◽  
Cu2o Thin Films ◽  
P Type

scholarly journals Synthesis and Characterization of Cu2ZnSnS4 Thin Films Obtained by Combined Magnetron Sputtering and Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2403
Author(s):  
Mohamed-Yassine Zaki ◽  
Florinel Sava ◽  
Angel-Theodor Buruiana ◽  
Iosif-Daniel Simandan ◽  
Nicu Becherescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
X Ray

Cu2ZnSnS4 (CZTS) is a complex quaternary material, and obtaining a single-phase CZTS with no secondary phases is known to be challenging and dependent on the production technique. This work involves the synthesis and characterization of CZTS absorber layers for solar cells. Thin films were deposited on Si and glass substrates by a combined magnetron sputtering (MS) and pulsed laser deposition (PLD) hybrid system, followed by annealing without and with sulfur powder at 500 °C under argon (Ar) flow. Three different Cu2S, SnS2, and ZnS targets were used each time, employing a different target for PLD and the two others for MS. The effect of the different target arrangements and the role of annealing and/or sulfurization treatment were investigated. The characterization of the absorber films was performed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), Raman spectroscopy, scanning electron microscopy, and regular transmission spectroscopy. The film with ZnS deposited by PLD and SnS2 and Cu2S by MS was found to be the best for obtaining a single CZTS phase, with uniform surface morphology, a nearly stoichiometric composition, and an optimal band gap of 1.40 eV. These results show that a new method that combines the advantages of both MS and PLD techniques was successfully used to obtain single-phase Cu2ZnSnS4 films for solar cell applications.

Optical Waveguiding (Pb, La)(Zr,Ti)O3 Thin Films Prepared by Pulsed Laser Deposition

1996 ◽  
Vol 444 ◽  
Author(s):  
S. B. Xiong ◽  
Z. G. Liu ◽  
X. Y. Chen ◽  
X. L. Guo ◽  
T. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrates ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Optical Waveguiding

AbstractThe ferroelectric (Pb, La) (Zr,Ti)03 (PLZT(9.4/65/35)) optical waveguiding thin films have been prepared on SiO2 coated Si and on silica glass substrates by pulsed laser deposition. X-ray θ–2θ scans revealed that the films are single-phase pseudo-cubic perovskite. The surface chemical composition of the as grown films were determined by XPS. The ferroelectric properties of the films as grown on Pt/Ti coated silicon were demonstrated by using a modified Sawyer-Tower circuit, and the optical waveguiding properties of the films were characterized by using a rutile prism coupling method. The as grown films have an average transmittance of 80% in the wavelength range of 400˜2000nm and a refractive index of 2.2 at 632.8mn close to the bulk PLZT. The distinct m-lines of the guided TM and TE modes of the films as grown on SiO2 coated Si substrates have been observed.

Pulsed laser deposition of single-phase lead-free NKLNST thin films with K- and Na-excess targets

2013 ◽  
Vol 567 ◽  
pp. 97-101 ◽  
Author(s):  
Mingmin Zhu ◽  
Xunzhong Shang ◽  
Gang Chang ◽  
Mingkai Li ◽  
Xiong Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lead Free ◽  
Phase Lead
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