scholarly journals Equivalent circuit modeling of dynamic hysteretic property of silicon steel under pulse width modulation excitation

2015 ◽  
Vol 117 (17) ◽  
pp. 17D110 ◽  
Author(s):  
T. Miyazaki ◽  
T. Mifune ◽  
T. Matsuo ◽  
Y. Shindo ◽  
Y. Takahashi ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Silicon Steel ◽  
Circuit Modeling ◽  
Hysteretic Property ◽  
Equivalent Circuit Modeling ◽  
Modulation Excitation

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Comb Drive ◽  
Optical Scanner

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

A New GaN HEMT Equivalent Circuit Modeling Technique Based on X-Parameters

2016 ◽  
Vol 64 (9) ◽  
pp. 2758-2777 ◽  
Author(s):  
Riadh Essaadali ◽  
Anwar Jarndal ◽  
Ammar B. Kouki ◽  
Fadhel M. Ghannouchi
Keyword(s):  
Equivalent Circuit ◽  
Modeling Technique ◽  
Circuit Modeling ◽  
Gan Hemt ◽  
Equivalent Circuit Modeling
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