scholarly journals Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

2015 ◽  
Vol 106 (5) ◽  
pp. 051904 ◽  
Author(s):  
Bastien Bonef ◽  
Lionel Gérard ◽  
Jean-Luc Rouvière ◽  
Adeline Grenier ◽  
Pierre-Henri Jouneau ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Atom Probe Tomography ◽  
Scanning Transmission Electron Microscopy ◽  
Atom Probe ◽  
Atomic Arrangement ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

scholarly journals Correlative atom probe tomography and scanning transmission electron microscopy reveal growth sequence of LPSO phase in Mg alloy containing Al and Gd

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Koji Inoue ◽  
Kenta Yoshida ◽  
Yasuyoshi Nagai ◽  
Kyosuke Kishida ◽  
Haruyuki Inui
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atom Probe Tomography ◽  
Scanning Transmission Electron Microscopy ◽  
Atom Probe ◽  
Lateral Growth ◽  
Lpso Phase ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractAtom probe tomography (APT) and transmission electron microscopy (TEM)/scanning transmission electron microscopy (STEM) have been used correlatively to explore atomic-scale local structure and chemistry of the exactly same area in the vicinity of growth front of a long-period stacking ordered (LPSO) phase in a ternary Mg–Al–Gd alloy. It is proved for the first time that enrichment of Gd atoms in four consecutive (0001) atomic layers precedes enrichment of Al atoms so that the formation of Al6Gd8 clusters occurs only after sufficient Al atoms to form Al6Gd8 clusters diffuse into the relevant portions. Lateral growth of the LPSO phase is found to occur by ‘ledge’ mechanism with the growth habit plane either {1$$\overline{1}$$ 1 ¯ 00} or {11$$\overline{2}$$ 2 ¯ 0} planes. The motion of ledges that give rise to lateral growth of the LPSO phase is considered to be controlled by diffusion of Al atoms.

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