High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

2015 ◽  
Vol 106 (4) ◽  
pp. 043303 ◽  
Author(s):  
Wei Shi ◽  
Shijiao Han ◽  
Wei Huang ◽  
Junsheng Yu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Deoxyribonucleic Acid ◽  
High Mobility ◽  
Spray Coating ◽  
Water Soluble ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

scholarly journals Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (12) ◽  
pp. 2647-2647
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

High mobility at the interface of the cocrystallized sandwich-type tetrapyrrole metal compound and fullerene layers

2019 ◽  
Vol 6 (11) ◽  
pp. 3345-3349
Author(s):  
Chiming Wang ◽  
Dongdong Qi ◽  
Guang Lu ◽  
Hailong Wang ◽  
Yanli Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Metal Compound ◽  
Organic Field Effect Transistor ◽  
Sandwich Type ◽  
Effect Transistor

Organic field effect transistor (OFET) devices fabricated based on mixed-(phthalocyaninato)(porphyrinato) yttrium(iii) and fullerene cocrystals represent one of the most excellent cocrystal ambipolar OFET devices reported thus far.

High Mobility Organic Field-Effect Transistor Based on Hexamethylenetetrathiafulvalene with Organic Metal Electrodes

2007 ◽  
Vol 19 (26) ◽  
pp. 6382-6384 ◽  
Author(s):  
Yukihiro Takahashi ◽  
Tatsuo Hasegawa ◽  
Sachio Horiuchi ◽  
Reiji Kumai ◽  
Yoshinori Tokura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Organic Metal ◽  
Metal Electrodes ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

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