Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames

2015 ◽  
Vol 106 (3) ◽  
pp. 033506 ◽  
Author(s):  
Joo Hyung Kim ◽  
Yoon Cheol Bae ◽  
Ah Rahm Lee ◽  
Kwang Ho Baek ◽  
Jin Pyo Hong
Keyword(s):  
Resistive Switching ◽  
Noise Sources ◽  
Bipolar Resistive Switching ◽  
Conducting Filament ◽  
Correlative Analysis

Observation of bias-dependent noise sources in a TiOx/TiOy bipolar resistive switching frame

2014 ◽  
Vol 104 (8) ◽  
pp. 083508 ◽  
Author(s):  
Joo Hyung Kim ◽  
Ah Rahm Lee ◽  
Yoon Cheol Bae ◽  
Kwang Ho Baek ◽  
Hyun Sik Im ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Noise Sources ◽  
Bipolar Resistive Switching

Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

2021 ◽  
Author(s):  
Zhenhua Wu ◽  
Yinxiao Feng ◽  
Yan Liu ◽  
Huilie Shi ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching

Size-Independent Unipolar and Bipolar Resistive Switching Behaviors in ZnO Nanowires

2019 ◽  
Vol 48 (6) ◽  
pp. 4057-4063 ◽  
Author(s):  
Oradee Srikimkaew ◽  
Sartanee Suebka ◽  
Panithan Sriborriboon ◽  
Narathon Khemasiri ◽  
Panita Kasamechonchung ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Zno Nanowires ◽  
Bipolar Resistive Switching

Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

2018 ◽  
Vol 18 (4) ◽  
pp. 2650-2656 ◽  
Author(s):  
Xuejiao Zhang ◽  
Zhiwei Xu ◽  
Bai Sun ◽  
Jianjun Liu ◽  
Yanyan Cao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Multiple State ◽  
Switching Devices

Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

2014 ◽  
Vol 14 (3) ◽  
pp. 355-358 ◽  
Author(s):  
Yoon Cheol Bae ◽  
Ah Rahm Lee ◽  
Gwang Ho Baek ◽  
Je Bock Chung ◽  
Tae Yoon Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Ion Drift ◽  
Oxygen Ion ◽  
Negative Difference

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

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