scholarly journals Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

AIP Advances ◽  
2015 ◽  
Vol 5 (1) ◽  
pp. 017103 ◽  
Author(s):  
Deepthi Nagulapally ◽  
Ravi P. Joshi ◽  
Aswini Pradhan
Keyword(s):  
Simulation Study ◽  
Piezoelectric Effect ◽  
Inverse Piezoelectric Effect ◽  
Cap Layer

Testing System of Needle Selectors for Jacquard Knitting Machines

2013 ◽  
Vol 397-400 ◽  
pp. 1174-1177
Author(s):  
Jie Ma ◽  
Xiao Feng Zha ◽  
Hai Bin Tao ◽  
Jun Fang Ni
Keyword(s):  
Control System ◽  
Working Conditions ◽  
Piezoelectric Effect ◽  
Testing System ◽  
C Language ◽  
Inverse Piezoelectric Effect

Based on piezoelectric theory of computer jacquard circular knitting machines, the needle selectors are analyzed under various complicated working conditions. According to characteristics of the inverse piezoelectric effect, the control system for needle mechanisms is designed and the driving program is implemented by C language, which is used to test the functions of needle mechanisms.

Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer

2018 ◽  
Vol 18 (11) ◽  
pp. 7400-7404
Author(s):  
Lin-Cheng Wei ◽  
Quan Wang ◽  
Chun Feng ◽  
Hong-Ling Xiao ◽  
Li-Juan Jiang ◽  
...  
Keyword(s):  
Simulation Study ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Cap Layer

The Effect of Changing Epitaxial Strain on Colossal Magnetoresistance Thin Films

2002 ◽  
Vol 751 ◽  
Author(s):  
Darren Dale ◽  
Aaron Fleet ◽  
J.D. Brock ◽  
Y. Suzuki
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Colossal Magnetoresistance ◽  
Strain State ◽  
Piezoelectric Effect ◽  
Structural Phase ◽  
Epitaxial Thin Films ◽  
Structural Phase Transitions ◽  
Inverse Piezoelectric Effect ◽  
Epitaxial Strain

ABSTRACTWe have studied the properties of epitaxial La(1-x)SrxMnO3 (x=0.3, 0.5) epitaxial thin films grown on BaTiO3 and SrTiO3. Significant modifications of properties are observed in magnetization and resistivity versus temperature experiments. These modifications occur at temperatures corresponding to structural phase transitions in the substrate. The x=0.5 composition is particularly sensitive to changes in the epitaxial strain state, exhibiting a direct correlation between changes in strain, magnetization and resistivity. Strain can also be induced in BaTiO3 by the inverse piezoelectric effect, which results in as much as a 13% decrease in the resistivity of the film.

A Compensation Method of Abrasive Surface Error Based on the Piezoelectric Feed

2013 ◽  
Vol 669 ◽  
pp. 283-291
Author(s):  
Fei Wu ◽  
Xiao Jian Chen ◽  
Jia Mei Jin
Keyword(s):  
Multilayer Structure ◽  
Piezoelectric Ceramic ◽  
Piezoelectric Effect ◽  
Active Deformation ◽  
Surface Error ◽  
Dc Voltage ◽  
Inverse Piezoelectric Effect ◽  
Tool Surface ◽  
Abrasive Surface ◽  
Deformation Compensation

The piezoelectric ceramic has inverse piezoelectric effect, which can be used in the manufacture of the mold internal compensation-driven. We design a multilayer structure with built-in array of piezoelectric ceramic to achieve active deformation to compensate the tool-shaped face. A piezoelectric micro-displacement compensation model is proposed based on the inverse piezoelectric effect of piezoelectric ceramic. According to the initial face error of tool or from wear, a certain amount of DC voltage is applied on the corresponding area of the piezoelectric ceramic elements to produce certain amount of shrinkage, achieving the goal to adjust tool surface. Based on this theory, we develop a device with active deformation compensation and propose an optimization algorithm of applied voltage.

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