scholarly journals Enhanced power factor of higher manganese silicide via melt spin synthesis method

2014 ◽  
Vol 116 (24) ◽  
pp. 245104 ◽  
Author(s):  
Xiaoya Shi ◽  
Xun Shi ◽  
Yulong Li ◽  
Ying He ◽  
Lidong Chen ◽  
...  
Keyword(s):  
Power Factor ◽  
Synthesis Method ◽  
Higher Manganese Silicide ◽  
Melt Spin ◽  
Manganese Silicide

PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING

2009 ◽  
Vol 23 (16) ◽  
pp. 3331-3348 ◽  
Author(s):  
Q. R. HOU ◽  
W. ZHAO ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Intermediate Layer ◽  
Activation Energies ◽  
Carbon Doping ◽  
Higher Manganese Silicide ◽  
Cap Layer ◽  
Manganese Silicide

N-type polycrystalline higher manganese silicide ( MnSi 1.7) films are prepared on thermally oxidized silicon substrates by magnetron sputtering. MnSi 1.85, Si , and carbon targets are used in the experiments. By co-sputtering of the MnSi 1.85 and Si targets, n-type MnSi 1.7 films are directly obtained. By increasing the Si content to the deposited films, both the Seebeck coefficient and electrical resistivity increase to high values. A Si intermediate layer between the MnSi 1.7 film and substrate plays an important role on the electrical properties of the films. Without the interlayer, the Seebeck coefficient is not stable and the electrical resistivity is higher. For preparation of MnSi 1.7 films by solid phase reaction, a sandwich structure Si / MnSi x/ Si (x < 1.7) and thermal annealing are used. A carbon cap layer is used as a doping source. With the carbon doping, the electrical resistivity of the MnSi 1.7 film decreases, while the Seebeck coefficient increases slightly. For reactive deposition, the MnSi x (x < 1.7) film is directly deposited on the heated substrate with a Si intermediate layer. By using a Si cap layer, a MnSi 1.7 film with a Seebeck coefficient of -292 μ V/K and electrical resistivity of 23 × 10-3 Ω- cm at room temperature is obtained. The power factor reaches 1636 μW/mK2 at 483 K. With such a high power factor, the n-type MnSi 1.7 material may be superior to p-type MnSi 1.7 material for the development of thermoelectric generators. Several smaller (0.036 - 0.099 eV ) and intermediate (0.10 - 0.28 eV ) activation energies are observed from the curves of logarithm of the resistivity versus reciprocal temperature. The larger activation energies (0.35 - 1.1 eV ) are consistent with the reported energy band gaps for higher manganese silicides.

Enhancement of thermoelectric power factor by Si:B addition to higher manganese silicide film

2014 ◽  
Vol 28 (26) ◽  
pp. 1450181 ◽  
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen
Keyword(s):  
Thermoelectric Power ◽  
Power Factor ◽  
Quartz Substrate ◽  
Thermoelectric Power Factor ◽  
Higher Manganese Silicide ◽  
Contact Materials ◽  
Silicide Film ◽  
Manganese Silicide ◽  
High Seebeck Coefficient ◽  
Ag Paste

Higher manganese silicide film ( HMS , MnSi x, x = 1.73–1.75) with addition of Si : B has been prepared on quartz substrate ( SiO 2) by magnetron sputtering of MnSi 2 and Si : B (1 at.% B content) targets. It is found that the Si : B -added HMS film has a much lower electrical resistivity (R) but maintains its high Seebeck coefficient (S). As a result, the thermoelectric power factor, PF = S2/R, is greatly enhanced. It is also found that the metal In together with Ag -paste can be used as ohmic contact materials for measuring the electrical properties of the HMS film. The thermoelectric power factor can reach 1255 μW/m-K2 at 733 K for the Si : B -added HMS film, which is about two times higher than that of the pure HMS film.

Influence of the Sintering Temperature of Al-Doped Higher Manganese Silicide for Improved Thermoelectric Properties

2019 ◽  
Vol 19 (3) ◽  
pp. 1699-1703 ◽  
Author(s):  
Si-Young Son ◽  
Yeon-Jin Baek ◽  
Ji-Hyun Beck ◽  
Jong-Bae Kim ◽  
Seung-Ho Yang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Sintering Temperature ◽  
Higher Manganese Silicide ◽  
Manganese Silicide

Vapor Phase Conversion Synthesis of Higher Manganese Silicide (MnSi1.75) Nanowire Arrays for Thermoelectric Applications

2013 ◽  
Vol 25 (4) ◽  
pp. 632-638 ◽  
Author(s):  
Ankit Pokhrel ◽  
Zachary P. Degregorio ◽  
Jeremy M. Higgins ◽  
Steven N. Girard ◽  
Song Jin
Keyword(s):  
Vapor Phase ◽  
Nanowire Arrays ◽  
Phase Conversion ◽  
Higher Manganese Silicide ◽  
Manganese Silicide

MECHANICAL AND THERMOELECTRIC PROPERTIES OF HIGHER MANGANESE SILICIDE FILMS

2006 ◽  
Vol 20 (15) ◽  
pp. 877-886 ◽  
Author(s):  
Q. R. HOU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Elastic Modulus ◽  
Magnetron Sputtering ◽  
Seebeck Coefficient ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
Energy Band Gap ◽  
Thermo Electric ◽  
Higher Manganese Silicide ◽  
Manganese Silicide

Higher manganese silicide (HMS, MnSi 1.7) films have been deposited on glass, silicon and thermally oxidized silicon substrates by the methods of magnetron sputtering and thermal evaporation. Mechanical and thermo-electric properties of the films have been measured. The hardness and elastic modulus of the films are 10.0~14.5 GPa and 156~228 GPa, respectively. The sign of the Seebeck coefficient at room temperature is positive for all samples. The resistivity at room temperature is between 0.53×10-3 and 45.6×10-3 ohm-cm. The energy band gap calculated from the resistivity data for the film deposited on thermally oxidized silicon substrate is about 0.459 eV.

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